Ohmic contact in graphene/SnSe2 Van Der Waals heterostructures and its device performance from ab initio simulation
Source abstract
Abstract
Van der Waals (vdW) type metallic/semiconducting heterostructures have attracted much attention for applications like nanoelectronics. The electronic properties of graphene/SnSe2 vdW heterostructure are investigated by the first-principles calculation. The band dispersions of both the graphene and SnSe2 layers are well preserved in the graphene/SnSe2 vdW heterostructure. Notably, n-type Ohmic contact is found at the graphene/SnSe2 vdW interface so that graphene is a fantastic electrode for the SnSe2 Schottky barrier field-effect transistor (SBFET). The on-state current of the 10-nm-gate-long ML SnSe2 SBFET with graphene electrode is 1535 µA/µm for high-performance (HP) application, which is twice that of the ML MoS2 SBFET with bulk Ti electrode and exceeds the requirement of the International Technology Roadmap for Semiconductors for HP devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · 2D Materials and Applications · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (49)
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