journal article·2023-11-28

High Piezoelectricity of Multicomponent Lead-Based Ceramics with High Temperature Stability

Wenyong Liao, Yuanhao Lu, Xingchen He, Tao Li, Lianyao Liang, Xiaoli Liu, Huayong Li, Ying Liu, Liujiang Zhou

ACS Applied Electronic Materials· Volume 5· Issue 11
Publisher page

Abstract

The design of the composition and adjustment of multicomponents to achieve a high chemical disorder are the important strategies for obtaining high piezoelectricity at a high depolarization temperature, which is conducive to a wide range of electromechanical applications. Here, the solid-state reaction method is used to prepare PZT-based piezoelectric ceramics; the replacement of A/B site ions by multielements flattens the ferroelectric free energy, which realized the high piezoelectric coefficient d 33 of ∼1000 pC/N at a good Curie temperature T C of 128 °C and the depolarization temperature T FE–FE of 105 °C. The microstructure of the ferroelectric phase and ferroelectric domain is systematically characterized by X-ray diffraction, scanning electron microscopy, piezoresponse force microscopy, and X-ray photoelectron spectroscopy. The atomic-scale substitutions of the A/B site-disordered elements break the long-range polarization order with the accompanied Pb vacancies. The excess Ni 2+ ions can regulate the grain growth, and the valence of Sb changed from Sb 3+ to Sb 5+, which is able to induce Pb 2+ vacancies. These synergistic effects of grain size and vacancy structure optimize the piezoelectric properties and temperature stability.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Neutron Scattering Technical Engineering Research Center, School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

School of Physics, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China

Funding

Guangdong Provincial Department of Science and Technology · National Natural Science Foundation of China · Guangdong-Hong Kong-Macao Joint Laboratory for Neutron Scattering Science and Technology · Department of Science and Technology of Dongguan City

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