Solution-Processed Copper Iodide Film as a p-Type Electrical Conductor and Their Applications
Source abstract
Abstract
Solution-processed inorganic electrical conductors are low-cost and stable to the environment compared to the organic or various nanowire materials. Developing such materials is a challenge in the field of electronics, sensors, and displays that contain transparent electrodes and carrier injectors. Here, we report on copper iodide (CuI) thin films as a high carrier density p-type electrical conductor. The CuI films can be fabricated by a simple solution process at low temperature (∼100 °C) annealing, and they exhibited a high hole carrier density (9.8 × 1018 cm–3) with a sheet resistance of 2.2 kohm sq–1, resulting in the p-type conductivity. In addition, owing to its wide band gap nature, the films appear clear and showed a high transmittance of >80% in the visible region. Based on these electrical/optical properties, we employed the CuI films as a source-drain electrode and sensing material into thin-film transistors and strain sensors, respectively. Both devices have satisfactory switching and sensing performance. This work suggests that the CuI material can be a promising candidate for p-type electrical conductors for various electronics and sensor applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Chungnam National University (CNU), Daejeon 34134, Republic of Korea
Department of Materials Science and Engineering, Andong National University, Andong 36729, Republic of Korea
Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 15073, Republic of Korea
Funding
National Research Foundation of Korea
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