DataVXACS Applied Electronic MaterialsPaper
journal article·2021-01-26

Layer Number-Dependent Enhanced Photoluminescence from a Quantum Dot Metamaterial Optical Resonator

Haruka Takekuma, Junfu Leng, Kazutaka Tateishi, Yang Xu, Yinthai Chan, Sou Ryuzaki, Pangpang Wang, Koichi Okamoto, Kaoru Tamada

ACS Applied Electronic Materials· Volume 3· Issue 1
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Source abstract

Abstract

High-density colloidal quantum dot (QD) thin films are promising materials for optoelectronic devices. Our experimental data revealed a unique layer number-dependent photoluminescence (PL) from multilayered QDs on a gold substrate. Compared with the PL intensity of QDs on glass substrates, the PL intensity of CdSe/ZnS QD multilayers on the gold substrate was enhanced approximately 10-fold with 6 layers (film thickness: 42 nm). This phenomenon was simply and reasonably explained by an optical simulation using the finite-difference time-domain method with the effective medium approximation, where the light confinement effect of the high-refractive index QD film acting as a “metamaterial optical resonator” was considered together with a long-range exciton–surface plasmon coupling and mirror effects. This result explains the QD film properties from both quantum physics and optical metamaterial viewpoints. This finding is important for the design of high-luminescence thin-film displays composed of condensed QD films.
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Research context

Ceramics & glassesElectronic materials

OpenAlex topics: Quantum Dots Synthesis And Properties · Gold and Silver Nanoparticles Synthesis and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Materials Chemistry and Engineering (IMCE), Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan

Institute of Materials Research and Engineering (IMRE), A*Star, 138634, Singapore

Department of Chemistry, National University of Singapore (NUS), 117543, Singapore

Nanomaterials Group, Institute of Systems, Information Technologies and Nanotechnologies (ISIT), Fukuoka Industry−Academia Symphonicity (FiaS), 4-1 Kyudaishinmachi, Nishi-ku, Fukuoka 819-0388, Japan

Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan

Advanced Institute for Materials Research (AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Funding

Japan Society for the Promotion of Science

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