Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor
Source abstract
Abstract
Amorphous indium gallium zinc oxide is a popular semiconductor candidate for amorphous oxide semiconductor thin-film transistors in the field of flat-panel display. However, the existence of gallium component restricts the enhancement of mobility dramatically. In this study, we report a new praseodymium (Pr) dopant as a stabilizer in amorphous indium zinc oxide semiconductor (IZO) with high mobility and stability. Meanwhile, the PrIZO TFTs were fabricated to investigate the effects of Pr on electrical properties, stability and aging effect. The optimal PrIZO TFT exhibited a desired performance with a saturation mobility (μsat) of 25.8/32.6 cm2 V−1 s−1, an Ion/Ioff ratio of 3.5 × 107/5.4 × 107, a subthreshold swing value of 0.14/0.13 V dec−1 and a threshold voltage (Vth) of 2.9/2.1 V, respectively, before and after an air environment storage period of 90 days without passivation layer, which exhibits lower sensitivity of the channel region to oxygen/moisture from the atmosphere than IZO TFT. XRD analysis revealed that the Pr dopant had no effect on the amorphous state of IZO thin film with annealing up to 400 °C. XPS analyses suggested that the fraction of oxygen vacancy subpeak decreased significantly with Pr incorporated into IZO. The μ-PCD decay analyzation and the subgap density of states indicate that acceptor-like trap states induced by Pr ions lead to the suppression of ambient-induced excess carrier in conduction band. This work is anticipated to provide a kind of reliable stabilizer for amorphous oxide semiconductor without deteriorating mobility significantly.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H (2004) Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432:488–49210.1038/nature03090 ↗
2. Du Ahn B, Jeon H-J, Sheng J, Park J, Park J-S (2015) A review on the recent developments of solution processes for oxide thin film transistors. Semicond Sci Technol 30:6400110.1088/0268-1242/30/6/064001 ↗
3. Kamiya T, Nomura K, Hosono H (2010) Present status of amorphous In–Ga–Zn–O thin-film transistors. Sci Technol Adv Mater 11:4430510.1088/1468-6996/11/4/044305 ↗
4. Park JS, Maeng WJ, Kim HS, Park JS (2012) Review of recent developments in amorphous oxide semiconductor thin-film transistor devices. Thin Solid Films 520:1679–169310.1016/j.tsf.2011.07.018 ↗
5. Oh S, Seob Yang B, Jang Kim Y, Sook OhM, Jang M, Yang H, Kyeong Jeong J, Seong Hwang C et al (2012) Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: a cation combinatorial approach. Appl Phys Lett 101:9210710.1063/1.4748884 ↗
6. Lee S, Ghaffarzadeh K, Nathan A, Robertson J, Jeon S, Kim C, Song IH, Chung UI (2011) Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors. Appl Phys Lett 98:20350810.1063/1.3589371 ↗
7. Jeong S, Ha YG, Moon J, Facchetti A, Marks TJ (2010) Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors. Adv Mater 22:1346–135010.1002/adma.200902450 ↗
8. Iwasaki T, Itagaki N, Den T, Kumomi H, Nomura K, Kamiya T, Hosono H (2007) Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: an application to amorphous oxide semiconductors in In–Ga–Zn–O system. Appl Phys Lett 90:24211410.1063/1.2749177 ↗
9. Mitoma N, Aikawa S, Gao X, Kizu T, Shimizu M, Lin MF, Nabatame T, Tsukagoshi K (2014) Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies. Appl Phys Lett 104:10210310.1063/1.4868303 ↗
10. Lee Y, Lee CH, Nam T, Lee S, Oh IK, Yang JY, Choi DW, Yoo C et al (2019) Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor. J Mater Sci 54:11145–11156. https://doi.org/10.1007/s10853-019-03685-410.1007/s10853-019-03685-4 ↗
11. Lee M, Il T, Cho J, Lee W, Myoung J (2015) Improved bias stress stability of In–Ga–Zn–O thin film transistors by UV—ozone treatments of channel/dielectric interfaces. Mater Sci Semicond Process 30:469–47510.1016/j.mssp.2014.10.016 ↗
12. Aikawa S, Darmawan P, Yanagisawa K, Nabatame T, Abe Y, Tsukagoshi K (2013) Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor. Appl Phys Lett 102:10210110.1063/1.4794903 ↗
13. Liu L, Fan H, Fang L, Dammak H, Pham-Thi M (2012) Dielectric characteristic of nanocrystalline Na0.5K0.5NbO3 ceramic green body. J Electroceram 28:144–14810.1007/s10832-012-9695-6 ↗
14. Liu L, Wu M, Yang Z, Fan H, Fang L (2012) Dielectric relaxation of NKN–BNT porous green body. Procedia Eng 27:793–79810.1016/j.proeng.2011.12.522 ↗
15. Chong E, Chun YS, Lee SY (2010) Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 C. Appl Phys Lett 97:10210210.1063/1.3479925 ↗
16. Kim C-J, Kim S, Lee J-H, Park J-S, Kim S, Park J, Lee E, Lee J et al (2009) Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors. Appl Phys Lett 95:25210310.1063/1.3275801 ↗
17. Park H-W, Kim B-K, Park J-S, Chung K-B (2013) Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure. Appl Phys Lett 102:10210210.1063/1.4794941 ↗
18. Park JS, Kim K, Park YG, Mo YG, Kim HD, Jeong JK (2009) Novel ZrInZnO thin-film transistor with excellent stability. Adv Mater 21:329–33310.1002/adma.200802246 ↗
19. Aikawa S, Nabatame T, Tsukagoshi K (2013) Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications. Appl Phys Lett 103:17210510.1063/1.4822175 ↗
20. Nomura K, Takagi A, Kamiya T, Ohta H, Hirano M, Hosono H (2006) Amorphous oxide semiconductors for high-performance flexible thin-film transistors. Jpn J Appl Physics, Part 1 Regul Pap Short Notes Rev Pap 45:4303–430810.1143/JJAP.45.4303 ↗
21. Jeon S, Hwang H (2003) Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3). J Appl Phys 93:6393–639510.1063/1.1569028 ↗
22. Corsino DC, Bermundo JPS, Fujii MN, Takahashi K, Ishikawa Y, Uraoka Y (2018) Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors. Appl Phys Express 11:6110310.7567/APEX.11.061103 ↗
23. Lu K, Yao R, Hu S, Liu X, Wei J, Wu W, Ning H, Xu M et al (2018) High-performance and flexible neodymium-doped oxide semiconductor thin-film transistors with copper alloy bottom-gate electrode. IEEE Electron Device Lett 39:839–84210.1109/LED.2018.2823304 ↗
24. Li M, Zhang W, Chen W, Li M, Wu W, Xu H, Zou J, Tao H et al (2018) Improving thermal stability of solution-processed indium zinc oxide thin-film transistors by praseodymium oxide doping. ACS Appl Mater Interfaces 10:28764–2877110.1021/acsami.8b07612 ↗
25. Xu H, Xu M, Li M, Chen Z, Zou J, Wu W, Qiao X, Tao H et al (2019) Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping. ACS Appl Mater Interfaces 11:5232–523910.1021/acsami.8b18329 ↗
26. Luo Y-R (2007) Comprehensive handbook of chemical bond energies. CRC Press, Boca Raton10.1201/9781420007282 ↗
27. Lin Z, Lan L, Xiao P, Sun S, Li Y, Song W, Gao P, Wang L et al (2015) High-mobility thin film transistors with neodymium-substituted indium oxide active layer. Appl Phys Lett 107:11210810.1063/1.4931140 ↗
28. Wu WJ, Le Chen C, Hu X, Xia XH, Zhou L, Xu M, Wang L, Peng JB (2016) Analytical extraction method for density of states in metal oxide thin-film transistors by using low-frequency capacitance-voltage characteristics. J Disp Technol 12:888–89110.1109/JDT.2016.2548505 ↗
29. Gonçalves G, Elangovan E, Barquinha P, Pereira L, Martins R, Fortunato E (2007) Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films. Thin Solid Films 515:8562–856610.1016/j.tsf.2007.03.126 ↗
30. Xu W, Wang H, Ye L, Xu J (2014) The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors. J Mater Chem C 2:5389–539610.1039/c4tc00334a ↗
31. Liu L, Fang L, Huang Y, Li Y, Shi D, Zheng S, Wu S, Hu C (2011) Dielectric and nonlinear current-voltage characteristics of rare-earth doped CaCu3Ti4O12 ceramics. J Appl Phys 110:09410110.1063/1.3658258 ↗
32. Liu L, Huang Y, Li Y, Shi D, Zheng S, Wu S, Fang L, Hu C (2012) Dielectric and non-Ohmic properties of CaCu3Ti4O12 ceramics modified with NiO, SnO2, SiO2, and Al2O3 additives. J Mater Sci 47:2294–2299. https://doi.org/10.1007/s10853-011-6043-110.1007/s10853-011-6043-1 ↗
33. Cong Y, Han D, Dong J, Zhang S, Zhang X, Wang Y (2017) Fully transparent high performance thin film transistors with bilayer ITO/Al–Sn–Zn–O channel structures fabricated on glass substrate. Sci Rep 7:1–610.1038/s41598-016-0028-x ↗
34. Yasuno S, Kugimiya T, Morita S, Miki A, Ojima F, Sumie S (2011) Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method. Appl Phys Lett 98:10210710.1063/1.3561755 ↗
35. Yasuno S, Kita T, Morita S, Kugimiya T, Hayashi K, Sumie S (2012) Transient photoconductivity responses in amorphous In–Ga–Zn–O films. J Appl Phys 112:5371510.1063/1.4751433 ↗
36. Goto H, Tao H, Morita S, Takanashi Y, Hino A, Kishi T, Ochi M, Hayashi K et al (2014) In-line process monitoring for amorphous oxide semiconductor tft fabrication using microwave-detected photoconductivity decay technique. IEICE Trans Electron E 97.C:1055–106210.1587/transele.E97.C.1055 ↗
37. Zheng S, Shi D, Liu L, Li G, Wang Q, Fang L, Elouadi B (2014) Oxygen vacancy-related dielectric relaxation and electrical conductivity in La-doped Ba(Zr0.9Ti0.1)O3 ceramics. J Mater Sci Mater Electron 25:4058–406510.1007/s10854-014-2129-2 ↗
38. Han F, Deng J, Liu X, Yan T, Ren S, Ma X, Liu S, Peng B et al (2017) High-temperature dielectric and relaxation behavior of Yb-doped Bi0.5Na0.5TiO3 ceramics. Ceram Int 43:5564–557310.1016/j.ceramint.2017.01.086 ↗
39. Han F, Ren S, Deng J, Yan T, Ma X, Peng B, Liu L (2017) Dielectric response mechanism and suppressing high-frequency dielectric loss in Y2O3 grafted CaCu3Ti4O12 ceramics. J Mater Sci Mater Electron 28:17378–1738710.1007/s10854-017-7671-2 ↗
40. Deng J, Sun X, Liu S, Liu L, Yan T, Fang L, Elouadi B (2016) Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics. J Adv Dielectr 6:165000910.1142/S2010135X16500090 ↗
41. Wu S, Zhu W, Liu L, Shi D, Zheng S, Huang Y, Fang L (2014) Dielectric properties and defect chemistry of WO3-doped K0.5Na0.5NbO3 ceramics. J Electron Mater 43:1055–106110.1007/s11664-013-2975-3 ↗
42. Liu X, Liu L, Han F, Liu S, Xiang H, Fang L (2016) Dielectric behavior of La2O3-modified 0.4(Ba0.8Ca0.2)TiO3–0.6Bi(Mg0.5Ti0.5)O3 lead-free ceramics. J Mater Sci Mater Electron 27:12128–1213310.1007/s10854-016-5365-9 ↗
43. Janotti A, Van De Walle CG (2005) Oxygen vacancies in ZnO. Appl Phys Lett 87:1–310.1063/1.2053360 ↗