The synthesis and characterization of Cu2ZnSnS4 thin films from melt reactions using xanthate precursors
Source abstract
Abstract
Kesterite, Cu 2 ZnSnS 4 (CZTS), is a promising absorber layer for use in photovoltaic cells. We report the use of copper, zinc and tin xanthates in melt reactions to produce Cu 2 ZnSnS 4 (CZTS) thin films. The phase of the as-produced CZTS is dependent on decomposition temperature. X-ray diffraction patterns and Raman spectra show that films annealed between 375 and 475 °C are tetragonal, while at temperatures <375 °C hexagonal material was obtained. The electrical parameters of the CZTS films have also been determined. The conduction of all films was p-type, while the other parameters differ for the hexagonal and tetragonal materials: resistivity (27.1 vs 1.23 Ω cm), carrier concentration (2.65 × 10 +15 vs 4.55 × 10 +17 cm −3 ) and mobility (87.1 vs 11.1 cm 2 V −1 s −1 ). The Hall coefficients were 2.36 × 10 3 versus 13.7 cm 3 C −1 .
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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References (70)
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