Mesh Bias Controlled Synthesis of TiO₂ and Al_0.74Ti_0.26O₃ Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

The effect of applying a mesh bias during the syntheses of amorphous titanium oxide (a-TiO2) thin films via mist chemical vapor deposition (mist-CVD) was investigated. When a negative bias is applied to the upstream electrode, some of the large mist particles are captured by the mesh electrode, promoting the generation of fine mist particles and increases the number density, resulting in a smooth and dense a-TiO2 network. As a result, the rate of deposition of the a-TiO2 thin films and the surface roughness decreased. The dielectric constant of the a-TiO2 film also increases from 48 to 57.5. These findings suggest that in the synthesis of a-TiO2 films by mist-CVD is promising for promoting the generation of dense a-TiO2 networks and improving the junction properties at the a-TiO2/c-Si interface. Additionally, the effect of applying a mesh bias in the synthesis of amorphous aluminum titanium oxide (a-Al0.74Ti0.26O3) thin alloy films was studied.