journal article·2013-01

Progress in the growth and characterization of nonpolar ZnO films

Jin-Ju Chen, Xue-Ran Deng, Hong Deng

Journal of Materials Science· Volume 48· Issue 2
Publisher page

Abstract

Zinc oxide (ZnO) is an important material for its potential applicability to short-wavelength optoelectronic devices such as light emitting diodes (LEDs) and laser diodes (LDs). Nonpolar ZnO materials have been developed in recent years to avoid the strong internal electric fields in active regions of optoelectronic devices and improve luminescence efficiency. The growth and physical properties of nonpolar ZnO films, which are essential for fabricating optoelectronic devices and improving device performance, still remains not well understood. In this review, the technologies for preparation of nonpolar ZnO epitaxial films are summarized, and recent developments are described. Then the main characteristics of nonpolar ZnO films are discussed with the deviations from those of polar ZnO films, including morphology, structural defects, anisotropic strain, optical, and electrical properties. The anisotropic electron transport and strains correlated strongly with the anisotropic surface morphologies of nonpolar ZnO films. Fabricating nonpolar ZnO films with high quality should be further developed to decrease the structural defect densities for substantial improvement of device performance, and intensive studies on their characteristics are especially important for device applications.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (98)

Show source-provided references
1. Jiao SJ, Zhang ZZ, Lu YM, Shen DZ, Yao B, Zhang JY, Li BH, Zhao DX, Fan XW, Tang ZK (2006) Appl Phys Lett 88:03191110.1063/1.2166686 ↗
2. Ryu Y, Lee TS, Lubguban JA, White HW, Kim BJ, Park YS, Youn CJ (2006) Appl Phys Lett 88:24110810.1063/1.2210452 ↗
3. Aoki T, Hatanaka Y, Look DC (2000) Appl Phys Lett 76:325710.1063/1.126599 ↗
4. Bagnall DM, Chen YF, Zhu Z, Yao T, Koyama S, Shen MY, Goto T (1997) Appl Phys Lett 70:223010.1063/1.118824 ↗
5. Makino T, Ohtomo A, Chia CH, Segawa Y, Koinuma H, Kawasaki M (2004) Physica E 21:67110.1016/j.physe.2003.11.110 ↗
6. Morhain C, Bretagnon T, Lefebvre P, Tang X, Valvin P, Guillet T, Gil B, Taliercio T, Teisseire-Doninelli M, Vinter B, Deparis C (2005) Phys Rev B 72:241305(R)10.1103/PhysRevB.72.241305 ↗
7. Wetzel C, Takeuchi T, Amano H, Akasaki I (2000) Phys Rev B 62:R1330210.1103/PhysRevB.62.R13302 ↗
8. Gangil S, Nakamura A, Shimomura M, Temmyo J (2007) Jpn J Appl Phys 46:L54910.1143/JJAP.46.L549 ↗
9. Zhu JJ, Aaltonen T, Venkatachalapathy V, Galeckas A, Yu Kuznetsov A (2008) J Cryst Growth 310:502010.1016/j.jcrysgro.2008.07.117 ↗
10. Zhang Y, Du G, Zhu H, Hou C, Huang K, Yang S (2004) Opt Mater 27:39910.1016/j.optmat.2004.03.019 ↗
11. Moriyama T, Fujita S (2005) Jpn J Appl Phys 44:791910.1143/JJAP.44.7919 ↗
12. Chen HG, Chen GJ, Jian SR, Huang GZ, Ni JW (2009) Int J Mod Phys B 23:115410.1142/S0217979209060610 ↗
13. Kashiwaba Y, Abe T, Onodera S, Masuoka F, Nakagawa A, Endo H, Niikura I, Kashiwaba Y (2007) J Cryst Growth 298:47710.1016/j.jcrysgro.2006.10.062 ↗
14. Saraf G, Lu Y, Siegrist T (2008) Appl Phys Lett 93:04190310.1063/1.2965801 ↗
15. Gorla CR, Emanetoglu NW, Liang S, Mayo WE, Lu Y, Wraback M, Shen H (1999) J Appl Phys 85:259510.1063/1.369577 ↗
16. Zúñiga-Pérez J, Muñoz-Sanjosé V, Palacios-Lidón E, Colchero J (2005) Phys Rev Lett 95:22610510.1103/PhysRevLett.95.226105 ↗
17. Zúñiga-Pérez J, Palacios-Lidón E, Muñoz-Sanjosé V, Colchero J (2007) Appl Phys A 88:7710.1007/s00339-007-3944-6 ↗
18. Zubiaga A, Tuomisto F, Zúñiga-Pérez J, Muñoz-SanJosé V (2008) Acta Phys Pol A 114:145710.12693/APhysPolA.114.1257 ↗
19. Saraf G, Zhong J, Dulub O, Diebold U, Siegrist T, Lu Y (2007) J Electron Mater 36:44610.1007/s11664-006-0052-x ↗
20. Chauveau JM, Laugt M, Vennegues P, Teisseire M, Lo B, Deparis C, Morhain C, Vinter B (2008) Semicond Sci Technol 23:03500510.1088/0268-1242/23/3/035005 ↗
21. Han SK, Hong SK, Lee JW, Lee JY, Song JH, Nam YS, Chang SK, Minegishi T, Yao T (2007) J Cryst Growth 309:12110.1016/j.jcrysgro.2007.09.025 ↗
22. Chauveau J-M, Buell DA, Laügt M, Vennéguès P, Teisseire-Doninelli M, Berard-Bergery S, Deparis C, Lo B, Vinter B, Morhain C (2007) J Cryst Growth 301–302:36610.1016/j.jcrysgro.2006.11.320 ↗
23. Lee JW, Han SK, Hong S-K, Lee JY, Yao T (2008) J Cryst Growth 310:410210.1016/j.jcrysgro.2008.06.042 ↗
24. Vennéguès P, Chauveau JM, Korytov M, Deparis C, Zuniga-Perez J, Morhain C (2008) J Appl Phys 103:08352510.1063/1.2905220 ↗
25. Lee JW, Han SK, Hong S-K, Lee JY (2010) Appl Surf Sci 256:184910.1016/j.apsusc.2009.10.018 ↗
26. Han SK, Kim J-H, Hong S-K, Song J-H, Song J-H, Lee JW, Lee JY, Hong SI, Yao T (2010) J Cryst Growth 312:219610.1016/j.jcrysgro.2010.04.056 ↗
27. Chauveau J-M, Vennéguès P, Laügt M, Deparis C, Zuniga-Perez J, Morhain C (2008) J Appl Phys 104:07353510.1063/1.2996248 ↗
28. Koida T, Chichibu SF, Uedono A, Sota T, Tsukazaki A, Kawasaki M (2004) Appl Phys Lett 84:107910.1063/1.1646749 ↗
29. Chauveau J-M, Vives J, Zuniga-Perez J, Laügt M, Teisseire M, Deparis C, Morhain C, Vinter B (2008) Appl Phys Lett 93:23191110.1063/1.3046783 ↗
30. Vennegues P, Zhu T, Bougrioua Z, Martin D, Zuniga-Perez J, Grandjean N (2009) Jpn J Appl Phys 48:09021110.1143/JJAP.48.090211 ↗
31. Han SK, Hong S-K, Lee JW, Kim JG, Jeong M, Lee JY, Hong SI, Park JS, Ihm YE, Ha J-S, Yao T (2011) Thin Solid Film 519:639410.1016/j.tsf.2011.04.093 ↗
32. Song H, Kim J-H, Kim EK (2009) J Korean Phys Soc 55:109810.3938/jkps.55.1098 ↗
33. Elanchezhiyan J, Bae KR, Lee WJ, Shin BC, Kim SC (2010) Mater Lett 64:119010.1016/j.matlet.2010.02.047 ↗
34. Pant P, Budai JD, Aggarwal R, Narayan Roger J, Narayan J (2009) Acta Mater 57:442610.1016/j.actamat.2009.05.031 ↗
35. Kuo CC, Liu W-R, Hsieh WF, Hsu C-H, Hsu HC, Chen LC (2009) Appl Phys Lett 95:01190510.1063/1.3159470 ↗
36. Pant P, Budai JD, Narayan J (2010) Acta Mater 58:109710.1016/j.actamat.2009.10.026 ↗
37. Han X, Gao Y, Dai J, Yu C, Wu Z, Chen C, Fang G (2010) J Phys D Appl Phys 43:14510210.1088/0022-3727/43/14/145102 ↗
38. Liu F, Zhang R, Hu Z, Sun J, Huang H, Li Z, Zhao J, Yin P, Guo L, Zhang X, Wang Y (2011) IEEE Trans Plasma Sci 39:70010.1109/TPS.2010.2093910 ↗
39. Liang M-H, Ho Y-T, Wang W-L, Peng C-Y, Chang L (2008) J Cryst Growth 310:184710.1016/j.jcrysgro.2007.11.158 ↗
40. Dai JN, Han XY, Wu ZH, Fang YY, Xiong H, Tian Y, Yu CH, He QH, Chen CQ (2011) J Electron Mater 40:44610.1007/s11664-011-1511-6 ↗
41. Jian S-R, Jang JS-C, Chen G-J, Chen H-G, Chen Y-T (2009) J Alloys Compd 479:34810.1016/j.jallcom.2008.12.073 ↗
42. Dai JN, Han XY, Wu ZH, Yu CH, Xiang RF, He QH, Gao YH, Chen CQ, Xiao XH, Peng TC (2010) J Alloys Compd 489:51910.1016/j.jallcom.2009.09.098 ↗
43. Chen JJ, Deng H, Li N, Tian YL, Ji H (2011) Mater Lett 65:71610.1016/j.matlet.2010.11.010 ↗
44. Chen JJ, Deng H, Ji H, Tian YL (2011) Vac Sci Technol A 29:03A11610.1116/1.3573670 ↗
45. Pierce JM, Adekore BT, Davis RF, Stevie FA (2005) J Cryst Growth 283:14710.1016/j.jcrysgro.2005.05.070 ↗
46. Kashiwaba Y, Abe T, Nakagawa A, Endo H, Niikura I, Kashiwaba Y (2009) Phys Status Solidi A 206:94410.1002/pssa.200881305 ↗
47. Abe T, Kashiwaba Y, Onodera S, Masuoka F, Nakagawa A, Endo H, Niikura I, Kashiwaba Y (2007) J Cryst Growth 298:45710.1016/j.jcrysgro.2006.10.056 ↗
48. Tian J-S, Liang M-H, Ho Y-T, Liu Y-A, Chang L (2008) J Cryst Growth 310:77710.1016/j.jcrysgro.2007.11.073 ↗
49. Wang W-L, Peng C-Y, Ho Y-T, Chang L (2010) Thin Solid Film 518:296710.1016/j.tsf.2009.09.186 ↗
50. Ho Y-T, Wang W-L, Peng C-Y, Liang M-H, Tian J-S, Lin C-W, Chang L (2008) Appl Phys Lett 93:12191110.1063/1.2988167 ↗
51. Chou MM, Hang D-R, Wang SC, Chen C, Lee C-Y (2010) J Cryst Growth 312:117010.1016/j.jcrysgro.2009.12.006 ↗
52. Chou MM, Hang D-R, Chen C, Wang SC, Lee C-Y (2011) Mater Chem Phys 125:79110.1016/j.matchemphys.2010.09.057 ↗
53. Liang Y-C (2010) J Alloys Comp 508:15810.1016/j.jallcom.2010.08.037 ↗
54. Lin H, Zhou S, Zhou J, Liu X, Gu S, Zhu S, Xie Z, Han P, Zhang R (2008) Thin Solid Film 516:607910.1016/j.tsf.2007.10.128 ↗
55. Zhou S, Zhou J, Huang T, Li S, Zou J, Wang J, Zhang X, Li X, Zhang R (2007) J Cryst Growth 303:51010.1016/j.jcrysgro.2007.01.029 ↗
56. Zhang YW, Li XM, Yu WD, Yang C, Cao X, Gao XD, Kong JF, Shen WZ, Zhao JL, Sun XW (2009) J Phys D Appl Phys 42:07541010.1088/0022-3727/42/7/075410 ↗
57. Lim S-H, Shindo D (2000) J Appl Phys 88:510710.1063/1.1313777 ↗
58. Huang T, Zhou S, Teng H, Lin H, Wang J, Han P, Zhang R (2008) J Cryst Growth 310:314410.1016/j.jcrysgro.2008.03.037 ↗
59. Yang AL, Song HP, Liang DC, Wei HY, Liu XL, Jin P, Qin XB, Yang SY, Zhu QS, Wang ZG (2010) Appl Phys Lett 96:15190410.1063/1.3394012 ↗
60. Zúñiga-Pérez J, Muñoz-Sanjosé V, Palacios-Lidón E, Colchero J (2006) Appl Phys Lett 88:26191210.1063/1.2218320 ↗
61. Kim J-H, Han SK, Hong SI, Hong S-K, Lee JW, Lee JY, Song J-H, Park JS, Yao T (2009) J Vac Sci Technol B 27:162510.1116/1.3119682 ↗
62. Lee JW, Kim J-H, Han SK, Hong S-K, Lee JY, Hong SI, Yao T (2010) J Cryst Growth 312:23810.1016/j.jcrysgro.2009.10.023 ↗
63. Matsui H, Tabata H (2005) Appl Phys Lett 87:14310910.1063/1.2081133 ↗
64. Matsui H, Tabata H (2006) J Appl Phys 99:12430710.1063/1.2207551 ↗
65. Matsui H, Tabata H (2007) Proc SPIE 6474:64740O10.1117/12.715020 ↗
66. Matsui H, Tabata H (2010) Proc SPIE 7603:76030710.1117/12.846068 ↗
67. Matsui H, Hasuike N, Harima H, Tabata H (2008) J Appl Phys 104:09430910.1063/1.3009959 ↗
68. Matsui H, Tabata H (2009) Appl Phys Lett 94:16190710.1063/1.3124243 ↗
69. Chou MM, Hang D-R, Chen C, Liao Y-H (2011) Thin Solid Film 519:362710.1016/j.tsf.2011.01.343 ↗
70. Yu J-Y, Huang T-H, Chang L, Liao Y-H, Chou M, Gan D (2011) J Electrochem Soc 158:H116610.1149/2.060111jes ↗
71. Chou MM, Chang L, Chung H-Y, Huang T-H, Wu J–J, Chen C-W (2007) J Cryst Growth 308:41210.1016/j.jcrysgro.2007.08.019 ↗
72. Chou MM, Chang L, Hang D-R, Chen C, Chang D-S, Li C-A (2009) Cryst Growth Des 9:207310.1021/cg800328g ↗
73. Lin W-H, Wu J–J, Chou M, Chang L (2009) Cryst Growth Des 9:330110.1021/cg900071z ↗
74. Lin H, Zhou S, Teng H, Wang J (2009) J Cryst Growth 311:45610.1016/j.jcrysgro.2008.09.015 ↗
75. Lin H, Zhou S, Teng H, Hou X, Jia T, Gu S, Zhu S, Xie Z, Han P, Zhang R, Xu K (2009) Appl Surf Sci 255:914610.1016/j.apsusc.2009.06.127 ↗
76. Cagin E, Yang J, Wang W, Phillips JD, Hong SK, Lee JW, Lee JY (2008) Appl Phys Lett 92:23350510.1063/1.2940305 ↗
77. Deng R, Yao B, Li YF, Li BH, Zhang ZZ, Zhao HF, Zhang JY, Zhao DX, Shen DZ, Fan XW, Yang LL, Zhao QX (2009) J Cryst Growth 311:439810.1016/j.jcrysgro.2009.07.043 ↗
78. Ho Y-T, Wang W-L, Peng C-Y, Chen W-C, Liang M-H, Tian J-S, Chang L (2009) Phys Status Solidi RRL 3:10910.1002/pssr.200903009 ↗
79. Wang W-L, Ho Y-T, Chiu K-A, Peng C-Y, Chang L (2010) J Cryst Growth 312:117910.1016/j.jcrysgro.2009.12.050 ↗
80. Wang W-L, Peng C-Y, Ho Y-T, Chuang S-C, Chang L (2011) J Vac Sci Technol A 29:03100110.1116/1.3539046 ↗
81. Diebold U, Koplitz LV, Dulub O (2004) Appl Surf Sci 237:33610.1016/S0169-4332(04)00985-7 ↗
82. Kroll M, Kuschel T, Löber T, Köhler U (2009) Surf Sci 603:L4910.1016/j.susc.2009.02.012 ↗
83. Sakaki H, Noda T, Hirakawa K, Tanaka M, Matsusue T (1987) Appl Phys Lett 51:193410.1063/1.98305 ↗
84. Zhou H, Chisholm MF, Pant P, Chang HJ, Gazquez J, Pennycook SJ, Narayan J (2010) Appl Phys Lett 97:12191410.1063/1.3489687 ↗
85. Ghosh S, Waltereit P, Brandt O, Grahn HT, Ploog KH (2002) Phys Rev B 65:07520210.1103/PhysRevB.65.075202 ↗
86. Zúñiga-Pérez J, Muñoz-Sanjosé V, Lorenz M, Benndorf G, Heitsch S, Spemann D, Grundmann M (2006) J Appl Phys 99:02351410.1063/1.2163014 ↗
87. Nam YS, Lee SW, Baek KS, Chang SK, Song J-H, Song J-H, Han SK, Hong S-K, Yao T (2008) Appl Phys Lett 92:20190710.1063/1.2930683 ↗
88. Taïnoff D, Al-Khalfioui M, Deparis C, Vinter B, Teisseire M, Morhain C, Chauveau J-M (2011) Appl Phys Lett 98:13191510.1063/1.3572025 ↗
89. Akasaka S, Nakahara K, Tsukazaki A, Ohtomo A, Kawasaki M (2010) Appl Phys Express 3:07110110.1143/APEX.3.071101 ↗
90. Ding P, Pan XH, Huang JY, He HP, Lu B, Zhang HH, Ye ZZ (2011) J Cryst Growth 331:1510.1016/j.jcrysgro.2011.07.004 ↗
91. Dai LP, Deng H, Chen JJ, Wei M (2007) Solid State Commun 143:37810.1016/j.ssc.2007.06.021 ↗
92. Dai LP (2008) Dissertation, University of Electronic Science and Technology of China
93. Ko TS, Lu TC, Zhuo LF, Wang WL, Liang MH, Kuo HC, Wang SC, Chang Li, Lin DY (2010) J Appl Phys 108:07350410.1063/1.3488898 ↗
94. Chauveau J-M, Teisseire M, Kim-Chauveau H, Morhain C, Deparis C, Vinter B (2011) J Appl Phys 109:10242010.1063/1.3578636 ↗
95. Chauveau J-M, Teisseire M, Kim-Chauveau H, Deparis C, Morhain C, Vinter B (2010) Appl Phys Lett 97:08190310.1063/1.3481078 ↗
96. Chauveau J-M, Morhain C, Teisseire M, Laügt M, Deparis C, Zuniga-Perez J, Vinter B (2009) Microelectron J 40:51210.1016/j.mejo.2008.06.067 ↗
97. Béaur L, Bretagnon T, Brimont C, Guillet T, Gil B, Tainoff D, Teisseire M, Chauveau J-M (2011) Appl Phys Lett 98:10191310.1063/1.3565969 ↗
98. Narayan J, Sharma AK, Kvit A, Jin C, Muth JF, Holland OW (2002) Solid State Commun 121:910.1016/S0038-1098(01)00431-8 ↗