n-Type Organic Field-Effect Transistors Based on Bisthienoisatin Derivatives
Source abstract
Abstract
Bisthienoisatins (BTI-R with R = n-propyl, n-hexyl, and 2-ethylhexyl) and the dicyanomethylene derivatives (BTICN-R) are prepared, and the thin-film transistors are investigated. The crystals have uniform stacking structures, but the packing pattern of the stacks varies depending on the alkyl chains. These materials show n-type transistor properties, and BTICNs exhibit greater performance than BTIs in general. In particular, BTICN-EH shows the maximum electron mobility exceeding 0.2 cm2 V–1 s–1.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Tokyo Institute of Technology, O-okayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
Funding
Japan Society for the Promotion of Science · Takahashi Industrial and Economic Research Foundation · Division of Materials Research
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