Coupling of Phase Transition and Self-Powered Photodetection of a NbSe2/VO2 Heterojunction
Source abstract
Abstract
An endeavor to design a self-powered photodetector that can work in a broad temperature range is required for everyday applications. Herein, we present a self-powered NbSe2/VO2 bilayer photodetector with boosted performance stimulated by the phase transition of VO2 after heating. The NbSe2/VO2 heterojunction can be converted into a Schottky junction from a staggered heterojunction thanks to the semiconductor-to-metal phase transition (SMT) of VO2, resulting in a controlled built-in electric field at the bilayer junction. Its origin comes from a sharp increase in carrier transport, which results in a boosted photoresponse in the bilayer. Our photovoltaic detector has shown a fast response time of 122 μs at the VO2 metallic phase for a visible wavelength (405 nm), featuring a self-powered, high-speed, and energy-efficient device.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Perovskite Materials and Applications · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Zhejiang 310027, P. R. China
Institute of Artificial Intelligence, Zhejiang Laboratory, Hangzhou 311122, P. R. China
Funding
Science, Technology and Innovation Commission of Shenzhen Municipality · Natural Science Foundation of Guangdong Province
References (32)
Show source-provided references
1. 10.1088/0953-8984/13/32/31610.1088/0953-8984/13/32/316 ↗
2. 10.1021/acsphotonics.8b0147110.1021/acsphotonics.8b01471 ↗
3. 10.1186/1556-276X-8-18810.1186/1556-276X-8-188 ↗
4. 10.1002/admi.20200088210.1002/admi.202000882 ↗
5. 10.1109/MCOM.2011.601173410.1109/MCOM.2011.6011734 ↗
6. 10.1002/ange.20120200810.1002/ange.201202008 ↗
7. 10.1002/adma.20130436810.1002/adma.201304368 ↗
8. 10.1002/adma.20120448810.1002/adma.201204488 ↗
9. 10.1021/acsnano.8b0799710.1021/acsnano.8b07997 ↗
10. 10.1103/PhysRevLett.114.01700110.1103/PhysRevLett.114.017001 ↗
11. 10.1038/nphys353810.1038/nphys3538 ↗
12. 10.1126/science.106506810.1126/science.1065068 ↗
13. 10.1103/PhysRevB.5.89510.1103/PhysRevB.5.895 ↗
14. 10.1103/PhysRevB.93.18451210.1103/PhysRevB.93.184512 ↗
15. 10.1103/PhysRevB.16.80110.1103/PhysRevB.16.801 ↗
16. 10.1103/PhysRevLett.3.3410.1103/PhysRevLett.3.34 ↗
17. 10.1063/1.318753110.1063/1.3187531 ↗
18. 10.1016/j.nanoen.2011.12.00210.1016/j.nanoen.2011.12.002 ↗
19. 10.1063/1.476764610.1063/1.4767646 ↗
20. 10.1016/j.rser.2013.05.03810.1016/j.rser.2013.05.038 ↗
21. 10.1109/LED.2012.222945710.1109/LED.2012.2229457 ↗
22. 10.1088/1361-6463/aa960710.1088/1361-6463/aa9607 ↗
23. 10.1088/1361-648X/aafff010.1088/1361-648X/aafff0 ↗
24. 10.1016/j.apsusc.2019.03.03310.1016/j.apsusc.2019.03.033 ↗
25. 10.1038/s41598-017-12950-y10.1038/s41598-017-12950-y ↗
26. 10.1016/j.spmi.2019.04.03210.1016/j.spmi.2019.04.032 ↗
27. 10.1039/D0TC01944E10.1039/D0TC01944E ↗
28. 10.1039/C6CS00896H10.1039/C6CS00896H ↗
29. 10.1016/j.solmat.2015.04.03510.1016/j.solmat.2015.04.035 ↗
30. 10.1103/PhysRev.172.78810.1103/PhysRev.172.788 ↗
31. 10.1103/PhysRevLett.30.78410.1103/PhysRevLett.30.784 ↗
32. 10.1103/PhysRevLett.44.162010.1103/PhysRevLett.44.1620 ↗