Dual-Channel WS₂/WSe₂ Heterostructure with Tunable Graphene Electrodes

Two-dimensional semiconductor heterostructures provide significant research potential for electronic and optoelectronic applications because of their scaled thickness, pristine heterostructure interface, and ultrafast carrier transport. Herein, we report a dual-channel field-effect transistor based on n-type WS 2 and p-type WSe 2 layered heterostructure using multilayered graphene as electrodes to enable electron-dominated ambipolar electrical transport. WS 2 exhibits mobility of 20 cm 2 V –1 s –1 and an on/off ratio of 10 5, whereas WSe 2 exhibits mobility of 5 cm 2 V –1 s –1 and an on/off ratio of 10 4 . Furthermore, our results show negative Schottky barrier heights between dual-channel heterostructure and multilayered graphene. The proposed design reduces complications in the fabrication of devices with integrated heterostructures, particularly for complementary metal-oxide semiconductor inverter applications.