A review of semiconductor heterojunctions

J. T. Calow; P. J. Deasley; S. J. T. Owen; P. W. Webb

doi:10.1007/bf00550056

journal article·1967-01

A review of semiconductor heterojunctions

J. T. Calow, P. J. Deasley, S. J. T. Owen, P. W. Webb

Journal of Materials Science· Volume 2· Issue 1

Publisher page

Bibliographic record

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

Electronic materials

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (100+)

Show source-provided references

1. J. S. Preston, ?The Constitution and Mechanism of the Se Rectifier Photocell?, Proc. Roy. Soc. (Lond.) Series A, 202, 1950, 449.10.1098/rspa.1950.0112 ↗

2. A. I. Gubanov, ?The Theory of the Contact of Two Semiconductors of the Same Type of Conductivity?, Zh. Tekh. Fiz. 21, 1951, 304.

3. Idem, ?On the Theory of Contact of Two Semiconductors with Mixed Conductivity?, Zh. Eksper. Teor. Fiz. 21, 1951, 79.

4. W. Shockley, ?Circuit Element using Semiconductive Material?, US Patent 2, 569, 1951, 347.

5. A. I. Gubanov, ?Theory of Contact Phenomena in Semiconductors?, Zh. Tekh. Fiz. 22, 1952, 729.

6. H. Kroemer, ?Theory of a Wide-Gap Emitter for Transistors?, Proc. IRE 45, 1957, 1535.10.1109/JRPROC.1957.278348 ↗

7. Idem, ?Quasi-electric and Quasi-magnetic Fields in Non-uniform Semiconductors?, RCA Rev. 18, 1957, 332.

8. H. L. Armstrong, ?On Junctions between Semiconductors having Different Band Gaps?, Proc. IRE 46, 1958, 1307.

9. D. A. Jenny, ?The Status of Transistor Research in Compound Semiconductors?, ibid, 1958, 959.10.1109/JRPROC.1958.286835 ↗

10. R. L. Anderson, ?Ge-GaAs Heterojunctions?, IBM J. R. and D. 4, 1960, 283.10.1147/rd.43.0283 ↗

11. Idem, ?Junctions between Ge and GaAs?, Proc. Int. Conf. on Semiconductors, Prague (Czech. Acad. Sci.), 1960, 563.

12. T. K. Lakshmanan, ?p-n Junctions between Semiconductors having Different Energy Gaps?, Proc. IRE 48, 1960, 1646.

13. J. C. Marinace, ?Tunnel Diodes by Vapour Growth of Ge on Ge and GaAs?, IBM J. R. and D. 4, 1960, 280.10.1147/rd.43.0280 ↗

14. M. Wolf, ?Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters?, Proc. IRE 48, 1960, 1246.10.1109/JRPROC.1960.287647 ↗

15. M. Aven and D. Cook, ?Some Electrical Properties of ZnTe-CdS Heterojunctions?, J. Appl. Phys. 32, 1961, 960.10.1063/1.1736144 ↗

16. T. Okado, T. Kano, and Y. Sasaki, ?Epitaxial Vapour Growth of GaAs on Ge Single Crystals?, J. Phys. Soc. Japan 16, 1961, 2591.10.1143/JPSJ.16.2591 ↗

17. R. L. Anderson, ?Experiments on Ge-GaAs Heterojunctions?, Sol. State Electron. 5, 1962, 341.10.1016/0038-1101(62)90115-6 ↗

18. H. G. Grimmeiss and R. Memming, ?p-n Photo-voltaic Effect in CdS?, J. Appl. Phys. 33, 1962, 2217.10.1063/1.1728930 ↗

19. M. I. Nathan and J. C. Marinace, ?Phonon and Polaron Interaction in Ge-GaAs Tunnel Heterojunction?, Phys. Rev. 128, 1962, 2149.10.1103/PhysRev.128.2149 ↗

20. P. J. Price, ?Transmission of Bloch Waves through Crystal Interfaces?, Proc. Int. Conf. on Semiconductors, Exeter (Inst. Phys. and Phys. Soc.), 1962, 99.

21. L. J. Van Ruyven and W. Dekker, ?Epitaxial Growth of Ge on GaP?, Physica 28, 1962, 307.10.1016/0031-8914(62)90052-6 ↗

22. G. T. Wright, ?The Space-Charge-Limited Dielectric Triode?, Sol. State Electron. 5, 1962, 117.10.1016/0038-1101(62)90001-1 ↗

23. M. Aven and W. Garwacki, ?Epitaxial Growth and Properties of ZnTe-CdS Heterojunctions?, J. Electrochem. Soc. 110, 1963, 401.10.1149/1.2425774 ↗

24. D. A. Cusano, ?CdTe Solar Cells and Photovoltaic Heterojunctions in II?VI Compounds?, Sol. State Electron. 6, 1963, 217.10.1016/0038-1101(63)90078-9 ↗

25. F. F. Fang and H. N. Yu, ?Experiments on Optical Coupling between GaAs p-n Junction and Heterojunction?, Proc. IEEE 51, 1963, 860.10.1109/PROC.1963.2296 ↗

26. A. G. Foyt, ?A Proposed UHF Transistor using an Electroluminescent Emitter and Collector-Base Heterojunction?, ibid, 1963, 853.10.1109/PROC.1963.2287 ↗

27. P. N. Keating, ?Hole Injection into CdS from Cu2S?, J. Phys. Chem. Solids 24, 1963, 1101.10.1016/0022-3697(63)90023-4 ↗

28. H. Kroemer, ?A Proposed Class of Heterojunction Injection Lasers?, Proc. IEEE 51, 1963, 1782.10.1109/PROC.1963.2706 ↗

29. W. G. Oldham and A. G. Milnes, ?n-n Semiconductor Heterojunctions?, Sol. State Electron. 6, 1963, 121.10.1016/0038-1101(63)90005-4 ↗

30. R. H. Rediker, T. M. Quist, and B. Lax, ?High-Speed Heterojunction Photodiodes and Beam of Light Transistors?, Proc. IEEE 51, 1963, 218.10.1109/PROC.1963.1684 ↗

31. San-Mei Ku, ?The Preparation and Properties of Vapour Grown GaAs-GaP Alloys?, J. Electrochem. Soc. 110, 1963, 991.10.1149/1.2425926 ↗

32. L. Y. Wei and J. Schewchun, ?Negative Resistance and Hysteresis in a Ge-Si Heterojunction?, Proc. IEEE 51, 1963, 946.10.1109/PROC.1963.2344 ↗

33. H. N. Yu, ?The Frequency Response of Optotransistors?, ibid, 1963, 945.10.1109/PROC.1963.2343 ↗

34. Zh. I. Alferov, N. S. Zimogorova, O. M. Samolyanov, and M. K. Trukan, ?Photoelectric Properties of Heterojunctions in Some Semiconductors?, Ukrayin. Fiz. Zh. (USSR) 9, 1964, 659.

35. M. Aven and D. A. Cusano, ?Injection Electroluminescence in ZnS and ZnSe?, J. Appl. Phys. 35, 1964, 606.10.1063/1.1713423 ↗

36. J. Brownson, ?Alloyed Ge-Si Heterojunctions?, ibid, 1964, 1356.10.1063/1.1713625 ↗

37. L. Esaki, W. E. Howard, and J. Heer, ?The Field-Effect Interface Conductance in Ge-GaAs n-n Heterojunctions?, Appl. Phys. Letters 4, 1964, 3.10.1063/1.1723579 ↗

38. Idem, ?The Interface Transport Properties of Ge-GaAs Heterojunctions?, Surface Science 2, 1964, 127.10.1016/0039-6028(64)90051-2 ↗

39. F. F. Fang and W. E. Howard, ?Effect of Crystal Orientation on Ge-GaAs Heterojunctions?, J. Appl. Phys. 35, 1964, 612.10.1063/1.1713424 ↗

40. M. J. Hampshire and G. T. Wright, ?The Si-Ge n-p Heterojunction?, Brit. J. Appl. Phys. 15, 1964, 1331.10.1088/0508-3443/15/11/311 ↗

41. N. K. Kiseleva, ?Production and Some Properties of InSb-GaSb Heterojunctions?, Sov. Phys. Cryst. 9, 1964, 365.

42. A. Lopez and R. L. Anderson, ?Photocurrent Spectra of Ge-GaAs Heterojunctions?, Sol. State Electron. 7, 1964, 695.10.1016/0038-1101(64)90056-5 ↗

43. R. S. Muller and R. Zuleeg, ?Vapour-Deposited, Thin-Film Heterojunction Diodes?, J. Appl. Phys. 35, 1964, 1550.10.1063/1.1713665 ↗

44. W. G. Oldham and A. G. Milnes, ?Interface States in Abrupt Semiconductor Heterojunctions?, Sol. State Electron. 7, 1964, 153.10.1016/0038-1101(64)90140-6 ↗

45. T. Peceny, ?Proposal for Semiconductor Laser with Wide-Gap Emitters?, Phys. Stat. Solidi 6, 1964, 651.10.1002/pssb.19640060306 ↗

46. S. S. Perlman and D. L. Feucht, ?p-n Hetero-junctions?, Sol. State Electron. 7, 1964, 911.10.1016/0038-1101(64)90070-X ↗

47. R. H. Rediker, S. Stopek, and J. H. R. Ward, ?Interface-Alloy Epitaxial Heterojunctions?, ibid, 1964, 621.10.1016/0038-1101(64)90106-6 ↗

48. J. Shewchun and L. Y. Wei, ?Ge-Si Alloy Hetero-junctions?, J. Electrochem. Soc. 111, 1964, 1145.10.1149/1.2425938 ↗

49. J. Shirofuji and M. Nakayama, ?GaAs-Ge Alloyed Junction?, Japan J. Appl. Phys. 3, 1964, 801.10.1143/JJAP.3.801 ↗

50. L. J. Van Ruyven, ?The Position of the Fermi Level at a Heterojunction Interface?, Phys. Stat. Solidi 5, 1964, K109.10.1002/pssb.19640050326 ↗

51. M. Weinstein, R. O. Bell, and A. A. Menna, ?Preparation and Properties of GaAs-GaP, GaAs-Ge, and GaP-Ge Heterojunctions?, J. Electrochem. Soc. 111, 1964, 674.10.1149/1.2426209 ↗

52. K. Yawata, ?Investigation of Ge-GaAs Tunnel Heterodiodes?, NEC Res. Develop. (Japan) 7, 1964, 26.

53. B. Agusta and R. L. Anderson, ?Opto-electric Effects in Ge-GaAs p-n Heterojunctions?, J. Appl. Phys. 36, 1965, 206.10.1063/1.1713877 ↗

54. Zh. I. Alferov, V. I. Korolkov, I. P. Mikhailova-Mikheeva, V. N. Romanenko, and V. M. Tuchkevich, ?Study of Growth of GaP and CdTe on GaAs in Gas Transport Reactions?, Sov. Phys. Sol. State 6, 1965, 1865

55. Zh. I. Alferov, N. S. Zimogorova, M. K. Trukan, V. M. Tuchkevich, ?Some Photoelectric Properties of GaP-GaAs p-n Heterojunctions?, ibid, 7, 1965, 990.

56. S. Brojdo, T. J. Riley, and G. T. Wright, ?The Heterojunction Transistor and the Space-Charge-Limited Triode?, Brit. J. Appl. Phys. 16, 1965, 133.10.1088/0508-3443/16/2/303 ↗

57. J. Brownson, ?High-Speed Ge-Si n-n Alloyed Heterodiodes?, Trans. Metall. Soc. AIME 233, 1965, 450.

58. L. L. Chang, ?Field Dependence of Surface Mobility at n-n Heterojunction Interface?, Sol. State Electron. 8, 1965, 86.10.1016/0038-1101(65)90013-4 ↗

59. Idem, ?The Conduction Properties of Ge-GaAs (1?x) P(x) n-n Heterojunctions?, ibid, 1965, 721.10.1016/0038-1101(65)90059-6 ↗

60. Y. F. Chang, ?Junction Boundary Conditions for Heterojunctions?, J. Appl. Phys. 36, 1965, 3350.10.1063/1.1702978 ↗

61. J. R. Dale, and M. J. Josh, ?Heterojunctions by Alloying?, Sol. State Electron. 8, 1965, 1.10.1016/0038-1101(65)90002-X ↗

62. I. Feltinsh, and L. Freiberga, ?Some Experiments on Si-SiC and Ge-SiC Heterojunctions?, Latv. PSR Zimt. Akad. Vestis Fiz. Techn. Ser. (USSR). 123.

63. W. A. Gutierrez, and H. L. Wilson, ?A CdSe-ZnSe Thin-Film Rectifier?, Proc.IEEE 53, 1965, 749.10.1109/PROC.1965.4025 ↗

64. E. D. Hinkley, R. H. Rediker, and D. K. Jadus, ?GaAs-InSb n-n Heterojunction: a Single Crystal ?Schottky? Barrier?, Appl. Phys. Letters 6, 1965, 144.10.1063/1.1754207 ↗

65. D. M. Jackson, and R. W. Howard, ?Fabrication of Epitaxial SiC Films on Si?, Trans. Metall. Soc. AIME 233, 1965, 468.

66. E. Janik, ?Ge-Si Heterojunctions?, Przeglad Electron. (Poland) 6, 1965, 65.

67. Y. Kanda, I. Tokai, and H. Kozuka, ?Uniaxial Stress Effect on Ge-Si Alloyed Heterojunction?, Japan J. Appl. Phys. 4, 1965, 701.10.1143/JJAP.4.701 ↗

68. B. Kandilarov and R. Andreytchin, ?Photovoltaic Effects in CdS-CdSe Heterojunctions?, Phys. Stat. Solidi 8, 1965, 897.10.1002/pssb.19650080326 ↗

69. N. K. Kiseleva, ?The Electrical Properties of InSb-GaSb Heterojunctions?, Rad. Eng. Electron. Phys. (USA) 9, 1965, 1574.

70. M. V. Kot, L. M. Panasyuk, A. V. Simashkevich, A. E. Tsurkan, and D. A. Sherban, ?Intrinsic Recombination Radiation of Zn-Se-ZnTe Heterojunctions?, Sov. Phys. Sol. State 7, 1965, 1001.

71. J. S. Lamming and C. A. P. Foxell, ?GaAs Semiconductor Devices?, Mullard Tech. Comm. 8, 1965, 118.

72. J. Lindmayer, ?Heterojunction Properties of the Oxidised Semiconductor?, Sol. State Electron. 8, 1965, 523.10.1016/0038-1101(65)90102-4 ↗

73. J. Lindmayer and K. M. Busen, ?The Semiconductor-Oxide Interface as a Heterojunction?, Trans. Metall. Soc. AIME 233, 1965, 530.

74. R. L. Longini and D. L. Feucht, ?Semiconductor Heterojunctions?, ibid, 1965, 443.

75. R. S. Mroczkowski, M. C. Lavine, and H. C. Gatos, ?Metallurgical Aspects of Interface Alloyed GaAs-Ge Heterojunctions?, ibid, 1965, 456.

76. J. Nakai, A. Yasuoka and T. Okumura, ?CdSe-Ge Heterojunctions?, Japan J. Appl. Phys. 4, 1965, 545.10.1143/JJAP.4.545 ↗

77. P. C. Newman, ?Forward Characteristics of Heterojunctions?, Electron. Letters 1, 1965, 265.10.1049/el:19650239 ↗

78. D. W. Peters, ?Alumina Polyphase Heterojunction?, J. Amer. Ceram. Soc. 48, 1965, 220.10.1111/j.1151-2916.1965.tb14722.x ↗

79. T. B. Ramachandran, K. K. Chow, W. J. Morony, and P. Olendzensky, ?Photomixing in a GaAs(x)) P(1?x)-GaAs Heterodiode?, J. Appl. Phys. 36, 1965, 2594.10.1063/1.1714543 ↗

80. R. H. Rediker, S. Stopek, and E. D. Kinkley, ?Electrical and Electro-optical Properties of Interface-Alloy Heterojunctions?, Trans. Metall. Soc. AIME 233, 1965, 463.

81. I. Ryu and K. Takahashi, ?Preparation of Ge-GaAs Heterojunctions by Vacuum Evaporation?, Japan J. Appl Phys. 4, 1965, 850.10.1143/JJAP.4.850 ↗

82. E. A. Salkov, ?Some Properties of a p(SiC)-n(CdS) Junction?, Sov. Phys. Sol. State 7, 1965, 221.

83. L. J. Van Ruyven, J. M. P. Papenhuijzen, and A. C. J. Verhoeven, ?Optical Phenomena in Ge-GaP Heterojunctions?, Sol. State Electron. 8, 1965, 631.10.1016/0038-1101(65)90030-4 ↗

84. T. Yamato, ?Ge-ZnSe Heterojunctions?, Japan J. Appl. Phys. 4, 1965, 541.10.1143/JJAP.4.541 ↗

85. S. Yawata and R. L. Anderson, ?Optical Modulation of Current in Ge-Si n-n Heterojunctions?, Phys. Stat. Solidi 12, 1965, 297.10.1002/pssb.19650120127 ↗

86. V. K. Aladinskii and A. A. Maslov, ?Electrical Properties of Ge-GaAs (p-n and n-n) Heterojunctions?, Sov. Phys. Sol. State 7, 1966, 2789.

87. Zh. I. Alferov and D. Z. Gabruzov, ?Recombination Radiation Spectrum of GaAs with Current Excitation via p-n Heterojunctions of GaP-GaAs?, ibid, 1966, 1919.

88. J. L. Davis and M. K. Norr, ?Ge-Epitaxial PbS Heterojunctions?, J. Appl. Phys. 37, 1966, 1670.10.1063/1.1708582 ↗

89. J. P. Donnelly and A. G. Milnes, ?The Photovoltaic Response of nGe-nSi Heterodiodes?, Sol. State Electron. 9, 1966, 174.10.1016/0038-1101(66)90088-8 ↗

90. Idem, ?The Epitaxial Growth of Ge on Si by Solution Growth Techniques?, J. Electrochem. Soc. 113, 1966, 297.10.1149/1.2423940 ↗

91. Z. S. Gribnikov and V. I. Melnikov, ?Diffusion of ?Hot? Electrons in n-n Heterojunctions?, Sov. Phys. Sol. State 7, 1966, 1612.

92. Idem, ?Injection and Extraction of Hot Electrons in n-n Heterojunctions with Rapid Maxwellization of the Electron Gas?, ibid, 1966, 2364.

93. D. B. Holt, ?Misfit Dislocations in Semiconductors?, J. Phys. Chem. Solids 27, 1966, 1053.10.1016/0022-3697(66)90080-1 ↗

94. Idem, ?Defects in Epitaxial Films of Semiconducting Compounds with the Sphalerite Structure?, J. Matls. Sci. 1, 1966, 280.10.1007/BF00550176 ↗

95. T. Kimura, M. Nunoshita, and J. Yamaguchi, ?Electrical and Optical Properties of Ge-Si n-n Heterojunctions?, Japan J. Appl. Phys. 5, 1966, 63910.1143/JJAP.5.639B ↗

96. E. A. Muzalevsky, I. D. Konozenko, A. A. Paylenko, and S. kh. Kushnir, ?Some Properties of Cds-CdSe Heterojunctions?, Ukrayin Fiz. Zh. (USSR) 11, 1966, 436.

97. A. R. Riben, D. L. Feucht, and W. G. Oldham, ?Preparation of Ge-Si and Ge-GaAs Heterojunctions?, J. Electrochem. Soc. 113, 1966, 245.10.1149/1.2423925 ↗

98. J. Shewchun, ?Phonon Spectroscopy of Ge-Si Tunnel Heterojunctions?, Phys. Rev. 141, 1966, 775.10.1103/PhysRev.141.775 ↗

99. T. Arizumi, T. Nishinaga, and M. Kakehi, ?Thermodynamics of Vapour Growth of ZnSe-Ge-I2 System in Closed Tube Process?, Japan J. Appl. Phys. 5, 1966, 588.10.1143/JJAP.5.588 ↗

100. T. Arizumi and T. Nishinaga, ?Thermodynamical Considerations for the Preparation of GaAs-Fe Heterojunctions through Closed Tube Process?, ibid, 1966, 21.10.1143/JJAP.5.21 ↗