Demonstration of Monolithic Polycrystalline Diamond-GaN Complementary FET Technology for High-Temperature Applications
Source abstract
Abstract
We report the first demonstration of a high-temperature-tolerant complementary field-effect transistor (FET) inverter using a monolithic integration of n-channel gallium nitride (GaN) and p-channel diamond. The operation of the inverter up to 250 °C was recorded. A key feature of this work originates from the successful epitaxial growth of p-channel hydrogen-terminated polycrystalline diamond FET on an AlGaN/GaN high-electron-mobility-transistor structure, which then could be coprocessed to realize the inverter. The device stability in the diamond FET was achieved with a ∼45 nm-thick atomic layer deposition of Al2O3 at 450 °C, serving as the gate dielectric as well as passivation for both diamond and GaN transistors. The process window of the coprocessing diamond and AlGaN/GaN was explored extensively to current match the two FETs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, University of California, Davis, California 95616, United States
Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
Funding
National Aeronautics and Space Administration
References (29)
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