Studies on the relaxor behavior of sol-gel derived Ba(Zr x Ti1− x )O3 (0.30≤x≤0.70) thin films
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Abstract
We have studied the relaxor behavior of sol-gel derived Ba(Zr x Ti1− x )O3 (0.30≤ x≤0.70) thin films. The plausible mechanism of the relaxor behavior has been analyzed from the dielectric data and micro-Raman spectra. Substitution of Zr+4 for Ti+4 in BaTiO3 lattice reduces its long-range polarization order yielding a diffused paraelectric to ferroelectric phase transition. The solid solution system is visualized as a mixture of Ti+4 rich polar region and Zr+4 rich regions and with the increase in Zr contents the volume fraction of the polar regions are progressively reduced. At about 25.0 at% Zr contents the polar regions exhibit typical relaxor behavior. The degree of relaxation increases with Zr content and maximizes at 40.0 at% Zr doped film. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (Tf). Below Tf, a long range polarization ordering was ascertained from the polarization hysteresis measurement.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Microwave Dielectric Ceramics Synthesis
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References (28)
Show source-provided references
1. L. E. CROSS, Ferroelectrics 76 (1987) 241.10.1080/00150198708016945 ↗
2. D. VIEHLAND, S. J. JANG, L. E. CROSS and M. WUTTIG, J. Appl. Phys. 68 (1990) 2916.10.1063/1.346425 ↗
3. V. WESTPHAL, W. KLEEMANN and M. D. GLINCHUK, Phys. Rev. Lett. 68 (1992) 847.10.1103/PhysRevLett.68.847 ↗
4. L. E. CROSS, Ferroelectrics. 151 (1994) 305.10.1080/00150199408244755 ↗
5. G. A. SAMARA, J. Phys.: Condens. Matter. 15 (2003) R367.
6. Z. YU, C. ANG, R. GUO and A. S. BHALLA, J. Appl. Phys. 92 (2002) 2655.10.1063/1.1495069 ↗
7. Idem. ibid., 92 (2002) 1489.10.1063/1.1487435 ↗
8. Z. YU, R. GUO and A. S. BHALLA, ibid. 88 (2000) 410.10.1063/1.373674 ↗
9. A. DIXIT, S. B. MAJUMDER, R. S. KATIYAR and A. S. BHALLA, Appl. Phys. Lett. 82 (2003) 2679.10.1063/1.1568166 ↗
10. J. ZHAI, X. YAO, L. ZHANG and B. SHEN, ibid. 84 (2004) 3136.10.1063/1.1715152 ↗
11. P. SCIAU and A. M. CASTAGNOS, Ferroelectrics, 270 (2002) 259.10.1080/00150190211191 ↗
12. P. SCIAU, G. CALVANIN and J. RAVEZ, Solid State Comm. 113 (2000) 77.10.1016/S0038-1098(99)00445-7 ↗
13. R. FARHI, M. E. MARSSI, A. SIMON and J. RAVEZ, J. Eur. Phys. B 9 (1999) 599.10.1007/s100510050803 ↗
14. Y. HOTTA, G. W. J. HASSINK, T. KAWAI and H. TABATA, Jpn. J. Appl. Phys. 42 (2003) 5908.10.1143/JJAP.42.5908 ↗
15. A. DIXIT, S. B. MAJUMDER, A. SAVVINOV, R. GUO and A. S. BHALLA, Mat. Lett. 56 (2002) 933.10.1016/S0167-577X(02)00640-7 ↗
16. H. T. MARTIRENA and J. C. BURFOOT, Ferroelectric. 7 (1974) 151.10.1080/00150197408237979 ↗
17. G. BURNS and F. H. DACOL, Phys. Rev. B. 28 (1983) 2527.10.1103/PhysRevB.28.2527 ↗
18. H. VOGEL, Z. Phys. 22 (1921) 645; G. FULCHER, J. Am. Ceram. Soc. 8 (1925) 339.
19. A. DIXIT, S. B. MAJUMDER, P. S. DOBAL, R. S. KATIYAR and A. S. BHALLA, Thin Solid Films 447–448 (2004) 284.10.1016/S0040-6090(03)01065-4 ↗
20. I. G. SINY, R. S. KATIYAR and A. S. BHALLA, Ferroelectric Review. 2 (2000) 51.
21. G. SMOLENSKI and A. AGRANOVSKAYA, Sov. Phys. Solid State. 1 (1960) 1429.
22. C. RANDALL, A. BHALLA, T. SHROUT and L. E. CROSS, J. Mater. Res. 5 (1990) 829.10.1557/JMR.1990.0829 ↗
23. L. NEEL, Compt Rend. Acad. Sci. 228 (1949) 664.
24. A. MORGONWNIK and J. MYDOSH, Solid State Commun. 47 (1983) 321.10.1016/0038-1098(83)90910-9 ↗
25. H. QIAN and L. A. BURSILL, Int. J. Mod. Phys. B 10 (1996) 2007.10.1142/S021797929600091X ↗
26. C. ANG, Z. JING and Z. YU, J. Phys. Condens. Matter. 14 (2002) 890 and references therein.
27. V. A. ISUPOV, Physics of the Solid State 45 (2003) 1107.10.1134/1.1583909 ↗
28. M. D. GLINCHUK and R. FARHI, J. Phys.: Condens. Mater 8 (1996) 6985.