High-Performance, Transparent Solution-Processed Organic Field-Effect Transistor with Low-k Elastomeric Gate Dielectric and Liquid Crystalline Semiconductor: Promises and Challenges
Source abstract
Abstract
The highly flexible and stretchable polymer elastomer having a low dielectric constant (k ∼ 2.6), called poly(dimethylsiloxane) (PDMS), is a promising gate dielectric material for solution-processed organic field-effect transistors (OFETs). A detailed understanding of PDMS-based OFETs is required to extend its application to flexible electronic devices. The present work discusses about the promises and challenges of PDMS-based solution-processed OFETs using a liquid crystal (LC), 2-decyl-7-phenyl-benzothienobenzothiophene (Ph-BTBT-10), as a semiconducting channel material. The liquid crystal-OFET (LC-OFET) exhibits high electrical performance such as a high hole mobility of ∼22 cm2 V–1 s–1, a low threshold voltage (<1 V), and a high current on/off ratio of 105. The OFETs also show high optical transparency (>90%). The electrical performance of LC-OFETs is observed to have a significant correlation with the annealing temperature of the Ph-BTBT-10 layer and is also influenced by different operating conditions such as air, nitrogen, and vacuum. The OFETs demonstrate anomalous bias stress behavior and hysteresis, which are also addressed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Advanced Sensor and Energy Harvesting Materials · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics, Indian Institute of Science Education and Research—Thiruvananthapuram, Maruthamala P O, Vithura, Thiruvananthapuram, Kerala 695551, India
School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K.
Funding
Department of Science and Technology, Ministry of Science and Technology · Ministry of Human Resource Development · Solar Energy Research Initiative · Newton- Bhabha short-term PhD placement program 2019
References (58)
Show source-provided references
1. 10.1002/adma.20130434610.1002/adma.201304346 ↗
2. 10.1038/ncomms400510.1038/ncomms4005 ↗
3. 10.1063/1.492744510.1063/1.4927445 ↗
4. 10.1038/nnano.2015.32410.1038/nnano.2015.324 ↗
5. 10.1038/ncomms864710.1038/ncomms8647 ↗
6. 10.1002/1521-4095(20021203)14:233.0.co;2-g10.1002/1521-4095(20021203)14:233.0.co;2-g ↗
7. 10.1021/cm049598q10.1021/cm049598q ↗
8. 10.1002/adfm.20180220110.1002/adfm.201802201 ↗
9. 10.1038/ncomms782810.1038/ncomms7828 ↗
10. 10.1109/LED.2016.252967810.1109/LED.2016.2529678 ↗
11. 10.1016/j.synthmet.2016.06.02110.1016/j.synthmet.2016.06.021 ↗
12. 10.1021/acs.chemmater.8b0390410.1021/acs.chemmater.8b03904 ↗
13. 10.1126/sciadv.170118610.1126/sciadv.1701186 ↗
14. 10.1002/anie.20180809810.1002/anie.201808098 ↗
15. 10.1021/acs.nanolett.5b0386810.1021/acs.nanolett.5b03868 ↗
16. 10.1038/srep0075410.1038/srep00754 ↗
17. 10.1002/adma.20130508410.1002/adma.201305084 ↗
18. 10.1038/s41598-017-08280-810.1038/s41598-017-08280-8 ↗
19. 10.1002/adma.20160117110.1002/adma.201601171 ↗
20. 10.1002/adma.20080320710.1002/adma.200803207 ↗
21. 10.1002/aelm.20150045410.1002/aelm.201500454 ↗
22. 10.1109/LED.2017.274295210.1109/LED.2017.2742952 ↗
23. 10.1016/j.orgel.2017.04.00510.1016/j.orgel.2017.04.005 ↗
24. 10.1021/acs.chemrev.8b0004510.1021/acs.chemrev.8b00045 ↗
25. 10.1016/j.orgel.2019.01.04310.1016/j.orgel.2019.01.043 ↗
26. 10.1002/adma.20050051710.1002/adma.200500517 ↗
27. 10.1002/adfm.20039003010.1002/adfm.200390030 ↗
28. 10.1021/acsami.6b0999310.1021/acsami.6b09993 ↗
29. 10.1021/acsami.6b0688210.1021/acsami.6b06882 ↗
30. 10.1063/1.238815110.1063/1.2388151 ↗
31. 10.1063/1.326573710.1063/1.3265737 ↗
32. 10.1016/j.tsf.2007.03.15710.1016/j.tsf.2007.03.157 ↗
33. 10.1109/LED.2017.271484510.1109/LED.2017.2714845 ↗
34. 10.1021/ar010110q10.1021/ar010110q ↗
35. Law K.-Y. · 2015
36. 10.1021/acsomega.8b0162910.1021/acsomega.8b01629 ↗
37. 10.1002/adfm.20190950110.1002/adfm.201909501 ↗
38. Guo, X.; Balon, F.; Hatton, R. A.; Shannon, J. M. In High Performance Transistors in Low Mobility Organic Semiconductors for Analog and High-Frequency Applications, 2008 Flexible Electronics and Displays Conference and Exhibition, 21–24 Jan 2008; pp 1–5.10.1109/FEDC.2008.4483883 ↗
39. 10.1039/C7TC01680H10.1039/C7TC01680H ↗
40. 10.1038/nmat161210.1038/nmat1612 ↗
41. 10.1295/polymj.PJ200832410.1295/polymj.PJ2008324 ↗
42. 10.1038/nmat503510.1038/nmat5035 ↗
43. 10.1063/1.221513210.1063/1.2215132 ↗
44. 10.1002/adfm.20170722110.1002/adfm.201707221 ↗
45. 10.1016/j.synthmet.2019.05.00110.1016/j.synthmet.2019.05.001 ↗
46. 10.1038/ncomms1090810.1038/ncomms10908 ↗
47. 10.1002/adma.20180107910.1002/adma.201801079 ↗
48. 10.1002/advs.20190037510.1002/advs.201900375 ↗
49. 10.1016/j.sna.2009.02.01610.1016/j.sna.2009.02.016 ↗
50. 10.1021/acs.chemmater.5b0081010.1021/acs.chemmater.5b00810 ↗
51. 10.1080/15421406.2017.128942710.1080/15421406.2017.1289427 ↗
52. Cullity B. D. · 1978
53. 10.7567/APEX.7.09160110.7567/APEX.7.091601 ↗
54. 10.1039/b921449f10.1039/b921449f ↗
55. 10.1021/ja964229j10.1021/ja964229j ↗
56. 10.1002/adma.20140236310.1002/adma.201402363 ↗
57. 10.1002/aelm.20150040210.1002/aelm.201500402 ↗
58. 10.1007/s00706-009-0149-z10.1007/s00706-009-0149-z ↗