journal article·2019-09-24

Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory

Xutao Zhang, Ziyuan Li, Xiaomei Yao, Hai Huang, Dongdong Wei, Chen Zhou, Zhou Tang, Xiaoming Yuan, Pingping Chen, Weida Hu, Jin Zou, Wei Lu, Lan Fu

Publisher page

Abstract

Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Advanced Memory and Neural Computing · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China

Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China

School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, China

Funding

Ministry of Science and Technology of the People's Republic of China · Australian Research Council · National Natural Science Foundation of China · Shanghai Science and Technology Foundation

References (30)

Show source-provided references
1. 10.1021/acsnano.5b0301710.1021/acsnano.5b03017 ↗
2. 10.1021/nn103396710.1021/nn1033967 ↗
3. 10.1007/s12274-013-0356-010.1007/s12274-013-0356-0 ↗
4. 10.1063/1.493875210.1063/1.4938752 ↗
5. 10.1021/acs.nanolett.5b0196210.1021/acs.nanolett.5b01962 ↗
6. 10.1002/adma.20140366410.1002/adma.201403664 ↗
7. 10.1039/C5CP06139C10.1039/C5CP06139C ↗
8. 10.1038/srep1611410.1038/srep16114 ↗
9. 10.1021/nn500201g10.1021/nn500201g ↗
10. 10.1002/smll.20140231210.1002/smll.201402312 ↗
11. 10.1021/acs.nanolett.6b0286010.1021/acs.nanolett.6b02860 ↗
12. 10.1021/nl901270n10.1021/nl901270n ↗
13. 10.1007/s12274-013-0356-010.1007/s12274-013-0356-0 ↗
14. 10.1021/acs.nanolett.5b0484210.1021/acs.nanolett.5b04842 ↗
15. 10.1007/s12274-014-0524-x10.1007/s12274-014-0524-x ↗
16. 10.1021/nl304067410.1021/nl3040674 ↗
17. 10.1021/nl803154m10.1021/nl803154m ↗
18. 10.1039/C9NR01715A10.1039/C9NR01715A ↗
19. 10.1021/nl100540510.1021/nl1005405 ↗
20. 10.1088/0957-4484/26/44/44520210.1088/0957-4484/26/44/445202 ↗
21. 10.1021/acs.nanolett.7b0403910.1021/acs.nanolett.7b04039 ↗
22. 10.1021/nl303751d10.1021/nl303751d ↗
23. 10.1021/acsami.7b1441510.1021/acsami.7b14415 ↗
24. 10.1021/acsnano.8b0964910.1021/acsnano.8b09649 ↗
25. 10.1002/adma.20150334010.1002/adma.201503340 ↗
26. 10.1021/acs.nanolett.6b0010410.1021/acs.nanolett.6b00104 ↗
27. 10.1021/jp000930510.1021/jp0009305 ↗
28. 10.1039/C5TC03731J10.1039/C5TC03731J ↗
29. 10.1063/1.473121110.1063/1.4731211 ↗
30. 10.1063/1.491954910.1063/1.4919549 ↗