In Situ Growth of CVD Graphene Directly on Dielectric Surface toward Application

A technique for the in situ growth of patterned graphene by CVD has been achieved directly on insulating substrates at 800 °C. The graphene growth is catalyzed by a Ni–Cu alloy sacrificial layer, which integrates many advantages such as being lithography-free, and almost wrinkle-free, with a high repeatability and rapid growth. The etching method of the metal sacrificial layer is the core of this technique, and the mechanism is analyzed. Graphene has been found to play an important role in accelerating etching speeds. The Ni–Cu alloy exhibits a high catalytic activity, and thus, high-quality graphene can be obtained at a lower temperature. Moreover, the Ni–Cu layer accommodates a limited amount of carbon atoms, which ensures a high monolayer ratio of the graphene. The carbon solid solubility of the alloy is calculated theoretically and used to explain the experimental findings. The method is compatible with the current semiconductor process and is conducive to the industrialization of graphene devices.