A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate

The rapid development of flexible electronics industrialization has imposed more demanding requirements on flexible wearable devices. However, traditional memory storage on rigid substrates is no longer compatible with flexible substrates. The high polarization value of conventional chalcogenide ferroelectric films poses a problem, as it necessitates high film thickness, which hinders the development of device densification. At the same time, a flexible film achieved through etching sacrificial layers is no longer suitable for industrial production. In this study, we present a high quality and high polarization flexible 10 nm Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric film grown on mica substrate by employing the atomic layer deposition (ALD) technique. The flexible HZO ferroelectric films exhibited an average roughness at the atomic level, R a ∼ 0.931 nm. The structural properties of flexible HZO ferroelectric films were investigated. The results demonstrated a ferroelectric phase with a crystallographic spacing of 0.296 nm (111). The ferroelectricity of the flexible HZO ferroelectric films was investigated, demonstrating commendable polarization values: 2 P r ∼ 62.88 μC/cm 2 and 2 P s ∼ 82.20 μC/cm 2 . A good ferroelectricity even under 9 mm of bending was exhibited for flexible HZO ferroelectric films. Our work introduces a new method for achieving ultrathin, flexible, nonvolatile memory.