journal article·2000-11

Ferroelectric and dielectric properties of ferroelectromagnet Pb(Fe1/2Nb1/2)O3 ceramics and thin films

X. S. Gao, X. Y. Chen, J. Yin, J. Wu, Z. G. Liu, M. Wang

Journal of Materials Science· Volume 35· Issue 21
Publisher page

Abstract

The ferroelectric and dielectric properties of ferroelectromagnet Pb(Fe1/2Nb1/2)O3 (PFN) ceramics and thin films prepared by pulsed laser deposition (PLD) have been investigated systematically. PFN ceramics experienced a para-ferroelectric transition and a para-antiferromagnetic transition at 380 K and 145 K, respectively. At room temperature, it has an electrical remnant polarization of 11.5 μC/cm2 and a coercive field of 4.04 kV/cm. The dielectric behaviors show characteristics of diffusive phase transition at a wide temperature range around 380 K. Anomalies in the dielectric constant and loss tangent have been observed near the Neel temperature of 145 K, indicating a coupling between the ferroelectric and antiferromagnetic orders in PFN ceramics. At room temperature, the PFN films exhibited a remnant electric polarization of 7.4 μC/cm2, a coercive field of 10.5 kV/cm, and a dielectric constant of 486 at frequency of 10 kHz, indicating their potential applications in memory devices.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (15)

Show source-provided references
1. G. A. SMOLENSKII, A. I. AGRANOVSKYA, S. V. ISUPOV and V. A. ISUPOV, Sov. Phys-Teach. Phys1981.
2. V. A. BOKOV, I. E. MYLNIKOV and G. A. SMOLENSKII, Sov. Phys. JEPT. 42 (1961) 643.
3. M. YOKOSUKA, Jpn. J. Appl. Phys. Lett. 32 (1993) 1142.10.1143/JJAP.32.1142 ↗
4. M. H. LEE and W. K. CHOO, J. Alppl. Phys. 52 (1981) 5767.10.1063/1.329466 ↗
5. Q. LUO, X. Y. CHEN, Z. G. LIU, Z. M. SUN and N. B. MING, Appl. Surf. Sci. 108 (1997) 89.10.1016/S0169-4332(96)00545-4 ↗
6. G. A. SMOLENSKII, J. Phys. Soc. Jpn. 28 (1970) 26.
7. L. E. CROSS, S. JANG, R. E. NEWNHAM, S. NMURA and K. UCHINO, Ferroelectrics 23 (1980) 187.10.1080/00150198008018801 ↗
8. J. F. SCOTT and D. R. TILLEY, ibid. 161 (1994) 235.10.1080/00150199408213372 ↗
9. D. L. FOX, D. R. TILLEY, J. F. SCOTT and H. J. GUGGENHEIM, Phys. Rev. B. 21 (1980) 2926.10.1103/PhysRevB.21.2926 ↗
10. Z. J. HUNG, Y. CAO, Y. Y. SUN and C. W. CHU, ibid. 56 (1997) 2623.10.1103/PhysRevB.56.2623 ↗
11. K. S. C OLE, K. H. COLE and A. J. BURAGGRAFF, J. Am. Phys. Soc. 51 (1980) 4956.
12. J. R. MACDONALD, J. Chem. Phys. 61 (1974) 3977.10.1063/1.1681691 ↗
13. K. KIM and C. SUDHUMA, Mater. Res. Symp. Proc. 265 (1992) 313.10.1557/PROC-265-313 ↗
14. X. R. WANG, S. S. FAN, Q. Q. LI, B. L. GU and X. W. ZHANG, 35 (1996) 1002.
15. J. F. SCOTT, M. AZUMA, E. FUJI, T. OTSUKI, G. KANNA, C. PAZDE ARAUJO, L. D. MCMILLAN and T. ROBERTS, Proc. ISAF'92 (1992) p. 356.