DataVXJournal of Materials SciencePaper
journal article·2025-08

Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)

S. Ravi, C. Priya, A. Mohanbabu, S. Maheswari, A. Lakshmi Narayana, P. Murugapandiyan

Journal of Materials Science· Volume 60· Issue 30
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Electronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · Radio Frequency Integrated Circuit Design · Semiconductor Quantum Structures and Devices

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References (100+)

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