journal article·2023-06-27

Control of Optical and Electrical Characteristics of BaxSn1–xO2–x Films with Bandgap Engineering as a Function of Ba:Sn Ratio

Zheyu Zhang, Tahmineh Mahmoudi, Yeon Ho Im, Yoon-Bong Hahn

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Abstract

Herein, we report bandgap engineering of alloyed Ba x Sn 1– x O 2– x (BSO) to modulate the optical and electrical properties as a function of Ba:Sn ratio. The BSO nanoparticles were synthesized at 50 °C and annealed at 200 °C. It was found that the bandgap and electron mobility of BSO films decrease with increasing the Ba content in BSO, indicating that the electron mobility of the BSO-based electron transport layers in optoelectronic devices can be easily controlled by adjusting the Ba:Sn ratio. The bandgap and electron mobility of BSO films ranged from 3.02 to 3.71 eV and from 5.2 × 10 –3 to 9.8 × 10 –3 cm 2 /V, respectively.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · ZnO doping and properties · Gas Sensing Nanomaterials and Sensors

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Affiliations

School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Jeonbuk National University, 567 Baekjedaero, Deokjin-gu, Jeonju-si 54896, Republic of Korea

Funding

National Research Foundation of Korea

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