Ag Doping Modified SnSe-Based Flexible Memristors for Artificial Optoelectronic Synapses

Artificial optoelectronic synapses (OESs) have attracted extensive attention in neuromorphic vision. However, the fabrication of flexible OES is challenging, severely limiting its application in wearable optoelectronic devices. Herein, a method to improve the performance of two-dimensional SnSe-based flexible OES devices by doping Ag atoms is presented. The fabricated device exhibits critical synaptic functions under electrical stimulation, such as short- and long-term synaptic plasticity and learning experience behaviors. Especially, the device demonstrates pronounced optical synaptic behavior through the modulation of optical signals, mainly including short-term and long-term memory. Additionally, benefiting from the excellent mechanical properties of SnSe, the device shows outstanding flexibility, enduring over 100 bending cycles. The doping of Ag atoms addresses the challenge of suboptimal electrical performance in traditional memristors and demonstrates an optical synaptic behavior rarely observed in SnSe devices. This study not only indicates the viability of doping engineering in achieving and enhancing the synaptic plasticity of the OES devices but also promotes the advancement of flexible neuromorphic vision technologies in the future.