On-State Current Optimization for SnSe₂ Tunneling Field Effect Transistors with Silicene Electrodes

Improving the on-state currents ( I ON ) is vital for the practical application of tunneling field-effect transistors (TFETs). A study on the possibility of lifting the I ON for the SnSe 2 TFET with a silicene electrode is then carried out with ab initio quantum transport calculations. The optimal configuration uses p - and n -type vdW silicene/SnSe 2 as electrodes for the n - and p -type HetJ-TFET, respectively. Inspiringly, the I ON enhancement for the n -type HetJ-TFET is approximately 30 times, and the subthreshold swing ( SS ) is only 37–38 mV/dec. The I ON (LP) of 735 μA/μm at V DD = 0.5 V and I ON (HP) of 801 μA/μm at V DD = 0.4 V of the optimal n -type SnSe 2 HetJ-TFET exceed the IRDS LP and HP goals of 547 and 753 μA/μm at V DD = 0.6 V for the year 2037, respectively. The enhanced tunneling probability comes from the narrower tunneling barrier width and the varied tunneling path from the changed band dispersions by high hybridization. Our study proposes a feasible way to increase I ON for TFETs.