journal article·2024-05-28

Double-Side-Doped 2D TMD FET Channel

Kwangro Lee, Brian S. Y. Kim, Min Sup Choi, Nasir Ali, Hoseong Shin, Dewu Yue, Gil-Ho Kim, James Hone, Won Jong Yoo

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Abstract

Control over doping plays a critical role in advancing field-effect transistors (FETs). However, such on-demand doping remains an outstanding challenge for layered two-dimensional (2D) materials. Here, we demonstrate robust mono- and bilayer WSe 2 FETs with highly controllable and stable doping by integrating oxidation-induced WO x charge-transfer dopants on the top and bottom surfaces of WSe 2 on demand. Upon oxidation of WSe 2, we observe well-controlled layer-number-dependent doping of WSe 2, as evidenced by the red shift of Raman and photoluminescence peaks. We further observe highly controllable and stable p-type doping in mono- and bilayer WSe 2 FETs as the bottom and top surfaces are sequentially doped by WO x and subsequently capped by insulating SiO 2 and hexagonal boron nitride (hBN). Our work paves avenues for highly stable and on-demand doping of 2D semiconductors, enabling seamless integration of 2D semiconductors into next-generation device architectures.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea

Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721, United States

Department of Materials Science and Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea

Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen 518172, China

Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States

Funding

National Research Foundation of Korea · Ministry of Trade, Industry and Energy

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