Investigation on the Bandgap-Adjustable (Ga_1–xIn_x)₂O₃ Film Prepared by Magnetron Sputtering

With the continuous development of Ga 2 O 3 ultrawide bandgap material and devices, the demand for Ga 2 O 3 -based heterostructure has been increasing in recent years. (Ga 1– x In x ) 2 O 3 alloy, which boasts an adjustable bandgap, offers greater flexibility in the creation of optoelectronic and microelectronic devices. This paper presents a thorough analysis of (Ga 1– x In x ) 2 O 3 films fabricated using magnetron cosputtering with Ga 2 O 3 and In 2 O 3 targets. By modifying the sputtering power of the In 2 O 3 target, (Ga 1– x In x ) 2 O 3 films with the In content ranging from 0 to 0.81 can be produced, which can provide an adjustable bandgap within 4.94–3.42 eV. Meanwhile, the influences of the O 2 /Ar ratio and annealing temperature on the (Ga 1– x In x ) 2 O 3 films are analyzed, and a high O 2 /Ar ratio can enhance the flatness of the film by reducing the oxygen vacancy and increasing its density; a high annealing temperature can improve the crystallization quality of (Ga 1– x In x ) 2 O 3 films.