journal article·2024-01-23

Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices

Linqiang Xu, Lianqiang Xu, Qiuhui Li, Shibo Fang, Ying Li, Ying Guo, Aili Wang, Ruge Quhe, Yee Sin Ang, Jing Lu

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Abstract

The gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability compared to that of the conventional FinFET architecture. The significantly higher electron mobility of indium phosphide (InP) NW than that of silicon NW makes it particularly well-suited for high-performance (HP) electronic applications. In this work, we perform an ab initio quantum transport simulation to investigate the performance limit of sub-5 nm gate length ( L g ) GAA InP NW FETs. The GAA InP NW FETs with L g = 4 nm can meet the International Technology Roadmap for Semiconductors (ITRS) requirements for HP devices from the perspective of on-state current, delay time, and power dissipation. We also investigate the impact of strain on 3 nm- L g GAA InP NW FETs. The application of tensile strain results in a remarkable improvement in the corresponding device’s performance. These results highlight the potential of GAA InP NW FETs for HP applications in the sub-5 nm L g region.
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Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore

School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan 756000, P. R. China

School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People’s Republic of China

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

Zhejiang University─University of Illinois at Urbana−Champaign Institute, Zhejiang University, Haining 310027, China

State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China

Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, P. R. China

Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China

Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, P. R. China

Funding

Singapore University of Technology and Design · Beijing University of Posts and Telecommunications · Zhejiang University · Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Ningxia Province · Fundamental Research Funds for the Central Universities · China Scholarship Council · National Natural Science Foundation of China · Youth talent training project of Ningxia of China

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