One Transistor−One Memristor Integrated Device Based on the Dual Conductive Filament Mechanism

The memristors based on the mechanisms of oxygen vacancies or metal ion conduction filament face numerous challenges in terms of cycling stability, power consumption, and high-density integration. To address these challenges, a one transistor−one memristor (1T1R) architecture has been proposed, enabling the integration of data storage and information processing functions. Here, we have designed a 1T1R device combining a WSe 2 transistor and an Al x O y /Ag memristor. The oxide Al x O y layer is grown by a thermal oxidation technique that facilitates the formation and disruption of a conductive filament via the synergistic effect of oxygen vacancies and Ag ions. Benefiting from the dual conductive filament mechanism, the device exhibits a low threshold voltage (∼0.82 V), high switching ratio (10 5 ), and good retention characteristics (>4000 s); it also demonstrates multilevel storage capability by the gate control on the WSe 2 transistor component. This work develops a dual conductive filament-based 1T1R device, offering a device concept for future in-memory computing applications.