Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe₂P₄–Metal Contacts

The MoGe 2 P 4 monolayer, an emerging semiconductor with high carrier mobility, can be proposed as a promising channel material in field effect transistors (FETs). The contact resistance between MoGe 2 P 4 and the metal electrode will limit the performance of a realistic FET. Using density functional theory (DFT) calculations, we explore the contact properties of a MoGe 2 P 4 monolayer with six bulk metal electrodes (In, Ag, Au, Cu, Pd, and Pt). It is demonstrated that the Ohmic contacts are formed in all MoGe 2 P 4 –metal contacts due to the strong interfacial interactions, suggesting the high carrier injection efficiency. In addition, the MoGe 2 P 4 –Cu, −Pd, and −Pt contacts present 100% tunneling probability due to the absence of the tunneling barrier width. The tunneling probabilities of the MGP–In, MGP–Ag, and MGP–Au contacts are exceptionally higher than those of most other 2D semiconductors. Moreover, the tunneling-specific resistivity of all MoGe 2 P 4 –metal contacts is relatively low, indicating an ultralow contact resistance and excellent performance. These findings provide a useful guideline to design high-performance MoGe 2 P 4 -based electronic devices.