Conduction mechanisms in thin (0.6)BiFeO3-(0.4)PbTiO3 films
Source abstract
Abstract
Leakage current is one of the major drawbacks for a proper electrical and dielectric characterization limiting applications of ferroelectric materials, especially considering thin films. In this sense, understanding the leakage current mechanisms in such systems is of utmost importance. Herein, high quality (0.6)BiFeO3–(0.4)PbTiO3 (BFPT) thin films (∼90 nm) on Pt/TiO2/SiO2/Si substrates were synthesized by dip-coating, and electrical, structural, and microstructural properties were investigated. Analysis based on current density measurements revealed that, for BFPT thin films below 100 nm, all related bulk-limited conduction mechanisms are absent. At this thickness regime, only electrode-limited mechanisms should be considered, and the Fowler-Nordheim mechanism was found to be the predominant mechanism for fields above 240 kV/cm. Besides, dielectric spectroscopy investigations revealed real dielectric constants varying from 28 to 26, with low tangent loss (from 8% to 12%) in the range of 10 kHz and 1 MHz. Such results contribute for the further development of a new generation of BFPT thin films looking for appliable materials as electronic devices, non-volatile ferroelectric memories, and energy harvesting.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Dielectric properties of ceramics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (69)
Show source-provided references
1. Carter · 2013 · 1
2. Multiferroics: past, present, and future10.1557/mrs.2017.86 ↗
3. The evolution of multiferroics10.1038/natrevmats.2016.46 ↗
4. Why are there so few magnetic ferroelectrics?10.1021/jp000114x ↗
5. Multiferroic thin-film integration onto semiconductor devices10.1088/0953-8984/22/42/423201 ↗
6. Fundamentals of multiferroic materials and their possible applications10.1080/10408436.2014.992584 ↗
7. Structure and electrical properties of (100)-oriented BiSc1/2Fe1/2O3–PbTiO3 thin films with different thickness via sol–gel method10.1007/s10854-015-3338-z ↗
8. Physics of thin-film ferroelectric oxides10.1103/RevModPhys.77.1083 ↗
9. Advances in magnetoelectric multiferroics10.1038/s41563-018-0275-2 ↗
10. Physics and applications of bismuth ferrite10.1002/adma.200802849 ↗
11. Improved ferroelectric response of pulsed laser deposited BiFeO3-PbTiO3 thin films around morphotropic phase boundary with interfacial PbTiO3 buffer layer10.1063/1.5110335 ↗
12. Investigation of electrical properties in La-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method10.1007/s10971-015-3769-2 ↗
13. Structural and magnetic characterization of multiferroic (BiFeO3)1-x (PbTiO3)x solid solutions10.1103/PhysRevB.78.014401 ↗
14. BiFeO3-BaTiO3: a new generation of lead-free electroceramics10.1142/S2010135X18300049 ↗
15. Preparation and characterization of PZT solid solutions via sol-gel process10.1016/j.jcrysgro.2007.04.046 ↗
16. Structure property relations in BiFeO3/BaTiO3 solid solutions10.1063/1.371953 ↗
17. Structure and electrical properties of ternary BiFeO3-BaTiO3-PbTiO3 high-temperature piezoceramics10.1007/s40145-012-0021-1 ↗
18. Investigation of tetragonal distortion in the pbti03-bife03 system by high-temperature x-ray diffraction10.1557/JMR.1995.1301 ↗
19. Very high remnant polarization and phase-change electromechanical response of BiFeO3-PbTiO3 at the multiferroic morphotropic phase boundary10.1063/1.4764537 ↗
20. Multiferroism and enhancement of material properties across the morphotropic phase boundary of BiFeO3-PbTiO310.1063/1.4868319 ↗
21. Crystal and domain structure of the BiFeO3-PbTiO3 solid solution10.1063/1.1595726 ↗
22. Piezoelectric characterization of (0.6)BiFeO3-(0.4)PbTiO3 multiferroic ceramics10.1111/j.1551-2916.2010.04118.x ↗
23. Large remanent polarization in ferroelectric BiFe O3-PbTiO3 thin films on Pt/Si substrates10.1063/1.2759256 ↗
24. Improved dielectric and ferroelectric properties in Ti-doped BiFeO3-PbTiO3 thin films prepared by pulsed laser deposition10.1016/j.tsf.2009.11.072 ↗
25. Multiferroic properties and temperature-dependent leakage mechanism of Sc-substituted bismuth ferrite-lead titanate thin films10.1016/j.scriptamat.2010.11.015 ↗
26. The effect of post deposition anneal temperature on the structure of BiFeO3-PbTiO3 thin films10.1016/j.tsf.2012.09.066 ↗
27. Structural changes and ferroelectric properties of BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method10.1063/1.3053773 ↗
28. Influence of heating rate on the crystalline properties of 0.7BiFeO3 -0.3PbTiO3 thin films prepared by sol-gel process10.1016/j.apsusc.2010.08.044 ↗
29. Effect of different annealing atmosphere on ferroelectric properties of 0.7BiFeO3-0.3PbTiO3 thin films
30. Ferroelectric behavior of La and Mn co-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method10.1007/s10971-017-4549-y ↗
31. Magnetic and electric properies of 0.3BiFeO3-0.7PbTiO3 thin films prepared by RF-magnetron sputtering
32. Characterization of laser-transferred bismuth ferrite lead titanate ferroelectric thick films10.1063/1.2969288 ↗
33. Electric and magnetic properties of multiferroic (BiFeO3) 1-x-(PbTiO3)x films prepared by the sol-gel process10.1088/0022-3727/39/6/005 ↗
34. Structural, dielectric and ferroelectric properties of Ti-Modified 0.72BiFeO3-0.28PbTiO3 multiferroic thin films prepared by pulsed laser deposition10.1080/00150193.2010.492058 ↗
35. Enhanced ferroelectric and dielectric properties of BiFeO3–PbTiO3 thin films grown via a sol–gel multilayer deposition method10.1007/s10971-015-3706-4 ↗
36. Pulsed laser deposition and characterization of (BiFeO3)0.7-(PbTiO3)0.3 thin films10.1088/1742-6596/26/1/069 ↗
37. Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt/Si substrates10.1063/1.2839598 ↗
38. Preparation and properties of tetragonal bismuth ferrite lead titanate thin films using pulsed laser deposition
39. Crystalline and ferroelectric properties of 0.68BiFeO3-0.32PbTiO3 multiferroic thin film prepared by sol-gel method
40. Sol-Gel synthesis and characterization of BiFeO 3-PbTiO3 thin films10.1557/PROC-0997-I08-08 ↗
41. Electrical and magnetic properties of Mn-doped 0.7BiFeO3-0.3PbTiO3 thin films prepared under various heating atmospheres10.1016/j.matchemphys.2009.04.029 ↗
42. Nanomagnetism in nanocrystalline multiferroic bismuth ferrite lead titanate films10.1007/s11051-010-0134-9 ↗
43. Large ferroelectric polarization of chemical solution processed BiFeO3-PbTiO3 thin films10.1016/j.ssc.2013.07.024 ↗
44. Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method10.1007/s00339-010-6163-5 ↗
45. Ferroelectric enhancement in heterostructured ZnO/BiFeO3-PbTiO3 film10.1063/1.2393004 ↗
46. Ferroelectric properties of chemically synthesized perovskite BiFeO3-PbTiO3 thin films10.1063/1.3026527 ↗
47. Photovoltaic enhancement based on improvement of ferroelectric property and band gap in Ti-doped bismuth ferrite thin films10.1016/j.jallcom.2014.08.011 ↗
48. The structural, ferroelectric and optical properties of (Gd, Cr) co-substituted BiFeO3 thin films10.1007/s10854-018-0042-9 ↗
49. Effect of annealing temperatures on the structure and leakage mechanisms of BiFeO3 thin films prepared by the sol–gel method10.1007/s10971-014-3548-5 ↗
50. The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111)BiFeO3 thin film10.1063/1.4804144 ↗
51. Electrical reliability and leakage mechanisms in highly resistive multiferroic La0.1 Bi0.9FeO3 ceramics
52. Influence of la and Mn dopants on the current-voltage characteristics of BiFeO3/ZnO heterojunction10.1063/1.3699033 ↗
53. Manipulating leakage behavior via thickness in epitaxial BaZr0.35Ti0.65O3 thin film capacitors10.1063/1.5145119 ↗
54. Thickness dependence of leakage currents in high-permittivity thin films10.1063/1.1629141 ↗
55. Correlation of Ba:Gd ratio and film thickness to the dielectric, ferroelectric and leakage current mechanism of nanostructure Ba1-xGdxTiO3 thin films10.1016/j.physb.2021.412824 ↗
56. Leakage and reliability characteristics of lead zirconate titanate thin-film capacitors10.1111/j.1151-2916.1997.tb03240.x ↗
57. Electrical and magnetic characterization of multiferroic BiFeO3-PbTiO3 thin films10.1063/1.4918265 ↗
58. Structure-property relations in multifunctional bismuth ferrite – lead titanate
59. Reduced leakage current, enhanced ferroelectric and dielectric properties of (La, Fe)-codoped Bi0.5Na0.5TiO3-based thin films10.1016/j.ceramint.2015.03.177 ↗
60. Highly resistive fast-sintered BiFeO3 ceramics10.1080/10584587.2016.1190594 ↗
61. Structural and magnetic properties of BiFeO3-PbTiO3 polycrystals10.1080/00150193.2018.1472956 ↗
62. Influence of the thickness on structural, magnetic and electrical properties of BiFeO3-PbTiO3 thin film prepared by pulsed laser deposition
63. Kc · 2004
64. Large remanent polarization in ferroelectric BiFeO3–PbTiO3BiFeO3–PbTiO3 thin films on Pt∕SiPt∕Si substrates10.1063/1.2759256 ↗
65. Study of the electric properties of PbTiO3-BiFeO3 multilayer film structure10.1088/0022-3727/41/9/095302 ↗
66. Trap filled limit voltage (VTFL) and V2 law in space charge limited currents10.1063/1.2802553 ↗
67. Simplified theory of space-charge-limited currents in an insulator with traps10.1103/PhysRev.103.1648 ↗
68. Leakage mechanisms in BiFeO3 thin films10.1063/1.2535663 ↗
69. A review on conduction mechanisms in dielectric films10.1155/2014/578168 ↗