journal article·2024-07Open access

The influence of sub-surface damage microstructure on ultra-thin die flexural strength

Liu Shu, Chongyang Li, Yunwen Wu, Tao Hang, Lei Liu, Ming Li

Abstract

In the semiconductor industry, where miniaturization is a key driver, mechanical properties of ultra-thin dies are increasingly important research topics. Sub-surface damage (SSD) is a common issue in wafer thinning processes, but there is a lack of research on the relationship between SSD microstructure and ultra-thin die strength. In this study, the influence of SSD microstructure on flexural strength was investigated through three-point bending tests of ultra-thin dies prepared by distinct wafer-thinning methods, coupled with SSD microstructure characterization. Flexural strength was highest for dies dry polished with N pad, intermediate for dies dry polished with M pad, and lowest for dies with fine grinding. We researched SSD microstructure by high-resolution transmitted electron microscope (HRTEM), revealing that it comprises amorphous regions, micro-cracks, and high-density distortion areas. The SSD of the fine grinding samples was thick and intermittent, with observable micro-cracks. Comparatively, the SSD structure from M pad polishing was uniform but thicker, whereas SSD from N pad polishing was thinner but exhibited greater variability. SSD thickness not only influences the average value but also dictates the distribution of flexural strength. This research enhances the understanding of SSD microstructure's impact on ultra-thin die flexural strength, providing valuable insights for optimizing wafer thinning processes to enhance die reliability.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Surface Polishing Techniques · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (58)

Show source-provided references
1. Ultra-thin chips for high-performance flexible electronics10.1038/s41528-018-0021-5 ↗
2. Marks
3. Flip Chip integration of ultra-thinned dies in low-cost flexible printed electronics; the effects of die thickness, encapsulation and conductive adhesives10.1016/j.microrel.2021.114204 ↗
4. An improved three-point bending test method for the investigation of nanosecond laser dicing of ultrathin Si dies with Cu stabilization layer10.1016/j.matchar.2017.11.060 ↗
5. Mechanical and electrical properties of ultra-thin chips and flexible electronics assemblies during bending10.1016/j.microrel.2014.07.125 ↗
6. Chen · Evaluation of Die Strength by Using Finite Element Method With Experiment Validation · 2014 · 4 · 1152
7. Simulation study and parameter optimization of laser TSV using artificial neural networks10.1016/j.jmrt.2023.06.199 ↗
8. Characterization methods for ultrathin wafer and die quality
9. Ultrathin wafer pre-assembly and assembly process technologies: a review10.1080/10408436.2014.992585 ↗
10. Investigations of the influence of dicing techniques on the strength properties of thin silicon10.1016/j.microrel.2006.09.002 ↗
11. Die singulation technologies for advanced packaging: a critical review
12. Multi-strata stealth dicing before grinding for singulation-defects elimination and die strength enhancement: experiment and simulation10.1109/TSM.2015.2438875 ↗
13. Fractal fracture of single crystal silicon10.1557/JMR.1991.1248 ↗
14. An experimental investigation into thin silicon die strength evaluation
15. Experimental evaluations of the strength of silicon die by 3-point-bend versus ball-on-ring tests10.1109/TEPM.2009.2028329 ↗
16. Correction factors to strength of thin silicon die in three- and four-point bending tests due to nonlinear effects10.1016/j.microrel.2021.114424 ↗
17. Nonlinear characteristics in fracture strength test of ultrathin silicon die10.1088/0268-1242/30/4/045005 ↗
18. Mechanical suite of flexural bending method for electronic memory packages
19. Surface integrity of silicon wafers in ultra precision machining10.1007/s00170-005-2508-1 ↗
20. Understanding the effect of surface flaws on the strength distribution of brittle single crystals10.1111/jace.15800 ↗
21. Subsurface damage and bending strength analysis for ultra-thin and flexible silicon chips10.1007/s11431-021-2021-4 ↗
22. Advanced wafer thinning technology and feasibility test for 3D integration10.1016/j.mee.2012.10.025 ↗
23. Thinning and singulation of silicon: root causes of the damage in thin chips
24. Influence of Si wafer thinning processes on (sub)surface defects10.1016/j.apsusc.2017.01.259 ↗
25. Sub-surface damage of ultra-thin monocrystalline silicon wafer induced by dry polishing10.1007/s13391-020-00226-z ↗
26. Alternative insulation liners for through-silicon vias: a comprehensive review10.1016/j.mssp.2023.107726 ↗
27. Influence of the thickness of silicon dies on strength
28. A study on the diamond grinding of ultra-thin silicon wafers
29. Effect of abrasive grain position patterns on the deformation of 6H-silicon carbide subjected to nano-grinding10.1016/j.ijmecsci.2021.106779 ↗
30. Zhong · Recent advances and applications of abrasive processes for microelectronics fabrications · 2019 · 36 · 150
31. Effect of nanosecond laser dicing on the mechanical strength and fracture mechanism of ultrathin Si dies with Cu stabilization layer10.1109/TCPMT.2015.2497271 ↗
32. Evaluation of three-point bending strength of thin silicon die with a consideration of geometric nonlinearity10.1109/TDMR.2019.2937988 ↗
33. Effect of dicing technique on the fracture strength of Si dies with emphasis on multimodal failure distribution10.1109/TDMR.2009.2037141 ↗
34. Failure strength Weibull analysis of 4H-SiC die through a 3-PB test
35. Statistical fracture modelling of silicon with varying thickness10.1016/j.actamat.2006.04.032 ↗
36. Die separation and rupture strength for deep reactive ion etched silicon wafers10.1088/0960-1317/23/8/085020 ↗
37. Fracture strength and microstructural study of ultrathin Si die with Cu backside layer diced with picosecond laser10.1016/j.msea.2019.04.103 ↗
38. Probabilistic strength of {1 1 1} n-type silicon10.1023/A:1008973231053 ↗
39. A practical and systematic review of Weibull statistics for reporting strengths of dental materials10.1016/j.dental.2009.09.006 ↗
40. Mechanical properties and brittle behavior of silica aerogels10.3390/gels1020256 ↗
41. Fine grinding of silicon wafers: machine configurations for spindle angle adjustments10.1016/j.ijmachtools.2004.06.013 ↗
42. Dynamic crack modeling and analytical stress field analysis in single-crystal silicon using quantitative fractography10.1016/j.tafmec.2020.102693 ↗
43. Analytical description of fracture features in single crystal silicon10.1016/j.euromechsol.2020.104203 ↗
44. Failure analysis of modern silicon dice10.1111/ijac.12101 ↗
45. Diamond machining of silicon_ A review of advances in molecular dynamics simulation10.1016/j.ijmachtools.2014.09.013 ↗
46. Crystallographic effect on subsurface damage formation in silicon microcutting10.1016/j.cirp.2012.03.070 ↗
47. Phase transition and plastic deformation mechanisms induced by self-rotating grinding of GaN single crystals10.1016/j.ijmachtools.2021.103827 ↗
48. Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process10.1016/j.triboint.2023.108879 ↗
49. Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding10.1088/2631-7990/ad207f ↗
50. Subsurface damage in single-crystal silicon due to grinding and polishing10.1007/BF00579258 ↗
51. Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material10.1016/j.ijmachtools.2010.10.006 ↗
52. Phase transformations in silicon under dry and lubricated sliding10.1080/10402000208982562 ↗
53. A predictive model of grinding force in silicon wafer self-rotating grinding10.1016/j.ijmachtools.2016.07.009 ↗
54. Molecular dynamics simulation of phase transformations in silicon monocrystals due to nano-indentation10.1088/0957-4484/11/3/307 ↗
55. Suppressing scratch-induced brittle fracture in silicon by geometric design modification of the abrasive grits10.1016/j.jmrt.2018.05.016 ↗
56. Achieving micron-scale plasticity and theoretical strength in Silicon10.1038/s41467-020-16384-5 ↗
57. Prediction of the threshold load of dislocation emission in silicon during nanoscratching10.1016/j.actamat.2013.05.035 ↗
58. Microscopic stress analysis of nanoscratch induced sub-surface defects in a single-crystal silicon wafer10.1016/j.precisioneng.2023.04.006 ↗