Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Kangli Xu; Tianyu Wang; Yongkai Liu; Jiajie Yu; Zhenhai Li; Jialin Meng; Hao Zhu; Qingqing Sun; David Wei Zhang; Lin Chen

doi:10.1021/acsaelm.3c01496

journal article·2024-02-27

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Kangli Xu, Tianyu Wang, Yongkai Liu, Jiajie Yu, Zhenhai Li, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen

ACS Applied Electronic Materials· Volume 6· Issue 2

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Abstract

In this article, the effect of the ZrO 2 intercalation layer on the ferroelectric properties and the tunneling electroresistance (TER) effect of Hafnium–Lanthanum oxide (La:HfO 2 )-based ferroelectric tunnel junction (FTJ) devices were systematically investigated for the first time. Compared with the initial La:HfO 2 device, an improved value of remnant polarization (2 P r ) ∼16.3 μC/cm 2 @4 V by intercalating the ZrO 2 interlayer can be observed. The underline mechanism for the enhanced ferroelectric properties of La:HfO 2 thin films with the ZrO 2 intercalation layer was supported by the first-principal calculations. Furthermore, the FTJ performance was evaluated. The TER ratio of La:HfO 2 -based FTJs showed an increase from 1.5 to 15.1@6 V, 1000 ns@by ZrO 2 interlayer incorporating. Finally, the mechanism behind the enhancement of ferroelectric polarization characteristics and the FTJ performance of La:HfO 2 by introducing ZrO 2 interlayers were unveil. These findings provide valuable guidance for optimizing the ferroelectric properties and FTJ performance of HfO 2 -based thin films and promoting future memory applications.

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Research context

Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China

Zhangjiang Fudan International Innovation Center, Shanghai 201203, China

Funding

National Key Research and Development Program of China · China Postdoctoral Science Foundation · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China

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