Selective Crystallization of Ferroelectric HfxZr1–xO2 via Excimer Laser Annealing
Source abstract
Abstract
Herein, we report the ferroelectricity of Hf x Zr 1– x O 2 (HZO) thin films crystallized via excimer laser annealing at 25 °C under atmospheric conditions. We characterized the structure and antiferroelectric/ferroelectric properties of HZO thin films using X-ray diffraction and standard polarization–voltage hysteresis. The laser-annealed Hf 0.5 Zr 0.5 O 2 thin film was gradually crystallized with increasing laser pulse number. The HZO thin film series exhibited systemic changes in antiferroelectric/ferroelectric properties with variations in Zr concentration. In addition, we constructed a phase diagram of laser-annealed HZO thin films.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics Education, Seoul National University, Seoul08826, Republic of Korea
School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul08826, Korea
Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul08826, Korea
Funding
Korea Semiconductor Research Consortium · National Research Foundation of Korea · Ministry of Trade, Industry and Energy · Institute for Basic Science
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