Self-Powered Photodetectors Based on Ta2NiSe5/p-GaN Heterostructures for UV Imaging Applications
Abstract
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · GaN-based semiconductor devices and materials
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Affiliations
School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology
Jiangnan University
School of Electronic and Information Engineering, Jiangsu Province Key Laboratory of Advanced Functional Materials
Changshu Institute of Technology
Faculty of Radiophysics and Computer Sciences
Belarusian State University
A.N. Sevchenko Institute of Applied Physical Problems of Belarusian State University
Center for Quantum Devices, Niels Bohr Institute
University of Copenhagen
Funding
Jiangsu Provincial Key Research and Development Program · National Natural Science Foundation of China · Jiangnan University