DataVXACS Applied Electronic MaterialsPaper
journal article·2023-06-27

Electric Field Induced Schottky to Ohmic Contact Transition in Fe3GeTe2/TMDs Contacts

Guotao Jiang, Xiaohui Hu, Litao Sun

ACS Applied Electronic Materials· Volume 5· Issue 6
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Source abstract

Abstract

Although the two-dimensional transition metal dichalcogenides (TMDs) present excellent electrical properties, the contact resistance at the interface of metal/TMDs limits the device performance. Herein, we use 2D metallic Fe 3 GeTe 2 (FGT) as an electrode in contact with TMDs semiconductors MX 2 (M = Mo, W; X = S, Se, Te) and investigate the contact properties of FGT/MX 2 based on density functional theory calculations. We demonstrated that FGT/MX 2 presents n-type Schottky contacts, and their n-type Schottky barrier heights are lower than that of the most common bulk metal contacts with MX 2, suggesting that FGT can be used as an efficient metallic electrode for MX 2 . The transitions from n-type Schottky contact to p-type Schottky contact and from Schottky contact to Ohmic contact can be achieved in FGT/MX 2 under the electric field. This work not only illustrates an effective method to modulate the contact types and Schottky barrier heights of FGT/MX 2 contacts but also provides a route for designing the nanodevices based on FGT/MX 2 electrical contacts.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China

Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China

SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, China

Funding

Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Jiangsu Province · Central University Basic Research Fund of China · National Natural Science Foundation of China · Priority Academic Program Development of Jiangsu Higher Education Institutions · Jiangsu Planned Projects for Postdoctoral Research Funds · Key Laboratory of MEMS of Ministry of Education, Southeast University

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