GaN Single Nanowire p–i–n Diode for High-Temperature Operations
Source abstract
Abstract
III-Nitride single nanowire (NW)-based p–i–n diode was fabricated using a top–down etching method and its electrical and optoelectronic characteristics were investigated from room temperature to high operation temperatures up to 150 °C. The NW p–i–n diode exhibited good rectifying I–V properties at all measurement temperatures and the forward current could be further enhanced when the temperature was increased. Simulation-based data fitting revealed that the enhanced conduction was a result of increased carrier concentration inside the NW, especially holes in the drift layer, as well as reduced contact resistance. The reverse leakage current was kept low even at elevated temperatures so that the UV (∼365 nm) responsivity remained high for a wide temperature range, suggesting the feasibility of NW p–i–n diode for rectifying purposes and UV photon detection applications in high-temperature environments.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
ECE Department, Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong
School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
Funding
Research Grants Council, University Grants Committee · Shanghai Municipal Education Commission · Science and Technology Commission of Shanghai Municipality · ShanghaiTech University
References (45)
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