journal article·2023-12-26Open access

Self-Biased High-Responsivity Photodetector Based on a Bi2SeTe2 Topological Insulator

Satyam Sahu, Jaganandha Panda, Golam Haider, Otakar Frank, Martin Kalbáč, Matĕj Velický

ACS Applied Electronic Materials· Volume 5· Issue 12

Abstract

High Resolution Image Download MS PowerPoint Slide Topological insulators show promise for high-performance optoelectronic applications due to their nonlinear optical properties, broad spectral absorption, ultrafast response to optical excitation, and excellent thermoelectric properties. Here, we introduce a self-biased photodetector based on the topological insulator Bi 2 SeTe 2, driven by the photothermoelectric effect. Operating without external bias, the photodetector delivers a competitive visible-range photoresponse reaching responsivity of ≈27 mA/W and detectivity of ≈2 × 10 9 Jones at 458 nm. Comparable to individual topological insulators as well as topological insulator-based heterojunctions, this underscores Bi 2 SeTe 2 ’s potential, especially in scenarios where external power sources cannot be used. Its self-biased nature eliminates the need for an external bias, making it an ideal material for low-power and remote-sensing applications.
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Research context

OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, Prague 182 23, Czech Republic

Department of Biophysics, Chemical and Macromolecular Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, Prague 121 16, Czech Republic

Funding

European Regional Development Fund · Ministerstvo ?kolstv?, Ml?de?e a Telov?chovy · Grantov? Agentura Cesk? Republiky · Akademie Ved Cesk? Republiky

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