Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition
Source abstract
Abstract
Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant attention has been devoted to studying hafnia-based ferroelectric material systems due to their promising properties and opportunities. To achieve such ferroelectric fluorite structure oxides at low temperatures (below 400 °C), stabilizing the metastable noncentrosymmetric orthorhombic phase is crucial. This review provides a comprehensive overview of atomic layer deposition (ALD) techniques for obtaining the orthorhombic phase for low-temperature ferroelectric applications. We discuss optimization of the ALD process for synthesizing high-quality, low-temperature crystallizing ferroelectric films, including doping, precursor and oxygen source selection, deposition temperature, and interface engineering. In addition, the techniques for stabilizing the ferroelectric phase by regulating the thermal budget and stress with various annealing methods and stressors are discussed. The review focuses on different techniques to reduce the thermal budget required to acquire ferroelectricity, making hafnia-based ferroelectric materials compatible with back-end-of-line and three-dimensional integration for a variety of future applications, including flexible electronics applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States
Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561, Japan
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Department of BIT Medical Convergence, Kangwon National University, 1 Gangwondaehakgil, Chuncheon, Gangwon-do 24341, Republic of Korea
Department of Electrical and Computer Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York 11794, United States
Department of Electrical and Electronics Engineering, Kangwon National University, 1 Gangwondaehakgil, Chuncheon, Gangwon-do 24341, Republic of Korea
Funding
Ministry of Trade, Industry and Energy · Semiconductor Research Corporation · Korea Institute for Advancement of Technology
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