Logic Function and Random Number Generator Build Based on Perovskite Resistive Switching Memory and Performance Conversion via Flexible Bending

Perovskite CH3NH3SnCl3 thin films serving as the active layer are used for preparing flexible memory devices with the structure of Al/CH3NH3SnCl3/poly(vinyl alcohol)/ITO/PET. This memory device shows repeatable resistive switching characteristics, uniform threshold voltages, and a steady transient current response to a voltage pulse. Furthermore, the as-fabricated device was applied to the design and implementation of logical functions, including memory logic gates and an information display function. The devices also showed an obvious response in electrical memory properties to flexible bending. Flexible bending for 2000 cycles could cause the resistive switching memory performance to convert from write-once-read-many-times memory (WORM) to static random access memory (SRAM). Furthermore, the true random number generator was built by the random telegraph noise behavior in the HRS current.