Triple-Cation Perovskite Resistive Switching Memory with Enhanced Endurance and Retention

Organic–inorganic hybrid halide perovskites (OHHPs) offer excellent resistive switching (RS) properties, making them candidates for applications involving low-cost, flexible memories. However, compared with the operational stability of traditional oxide-based RS materials, the operational stability (in terms of endurance and retention) of OHHPs remains an obstacle to their use in RS memories. This paper reports an RS memory with reliable nonvolatile bipolar RS characteristics; the resistive layer is fabricated using a triple-cation perovskite owing to its structural stability and low sensitivity to the atmosphere. These devices offer operational stability over 103 endurance cycles and a retention time of up to 105 s through an adjustable forming process, which exceeds that of the most previous reports for OHHP-based RS memories with electrodes of Au, graphene, and Al. To better understand the RS mechanism, we simulated the evolution of iodine vacancies using a kinetic Monte Carlo model to elucidate the dynamics of conductive filaments and the device-failure mechanism. The results of this study should improve the stability and increase the understanding of the RS mechanism of OHHP-based memories.