DataVXACS Applied Electronic MaterialsPaper
journal article·2019-09-24Open access

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin

ACS Applied Electronic Materials· Volume 1· Issue 9
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Source abstract

Abstract

International audience
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France

Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), INSA, Bât. Blaise Pascal, 7 avenue Jean Capelle, F-69621 Villeurbanne Cedex, France

Funding

H2020 Leadership in Enabling and Industrial Technologies · Centre National de la Recherche Scientifique

References (25)

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