DataVXACS Applied Electronic MaterialsPaper
journal article·2024-04-23

2D Vertical and Horizontal Memristors Based on Large-Area 2D Tellurium Film

Luji Li, Gaojie Zhang, Muhammad Younis, Tianyuan Luo, Li Yang, Wen Jin, Hao Wu, Bichen Xiao, Wenfeng Zhang, Haixin Chang

ACS Applied Electronic Materials· Volume 6· Issue 4
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Source abstract

Abstract

2D tellurium (Te) films are appealing materials in electronic devices like transistors and detectors. However, applications in the field of memristors of the 2D Te film are still rare. Here, we report large-area 2D Te films prepared by two-step thermal evaporation, which achieves memristor functions in vertical and horizontal devices after O 2 ion etching. The vertical memristor has a long retention time of more than 10000 s and multilevel storage capabilities, and the response speeds of high- and low-resistance states are on the order of nanoseconds. The horizontal devices can simulate synaptic functions such as short- or long-term memory transformation and paired-pulse depression. Our work demonstrates that 2D thin Te films are a promising material in the field of memristors.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Micro and Nano Devices Fabrication Center, Yongjiang Laboratory, Ningbo315202, China

Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Funding

National Key Research and Development Program of China · Science, Technology and Innovation Commission of Shenzhen Municipality · Natural Science Foundation of Hubei Province · National Natural Science Foundation of China

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