DataVXACS Applied Electronic MaterialsPaper
journal article·2023-11-28Open access

Bias Dependence of Organic-Oxide Phototransistors with Peak Infrared Absorption at 1550 nm

Bogyeom Seo, Jusung Chung, Naresh Eedugurala, Jason D. Azoulay, Hyun Jae Kim, Tse Nga Ng

ACS Applied Electronic Materials· Volume 5· Issue 11
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Source abstract

Abstract

Photodetectors operating across the short-wave infrared region are essential elements of modern optoelectronic technologies. This work demonstrates the integration of an organic bulk heterojunction polymer layer on an oxide thin-film transistor to achieve a peak infrared photoresponse at 1550 nm. As the efficiency of organic semiconductors decreases at longer wavelengths, the phototransistor structure uses trap-assisted charge injection to enhance the photoresponse. This work optimizes the detector performance by investigating the balance between bias stress and signal-to-noise under different bias conditions, enabling a responsivity at 1550 nm up to 130 mA/W at a low light intensity of 2.5 × 10 –5 W/cm 2 .
Source: openalex_inverted_index · Quality: baseline

Research context

PolymersElectronic materials

OpenAlex topics: Thin-Film Transistor Technologies · Nanowire Synthesis and Applications · CCD and CMOS Imaging Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, United States

Department of Electrical and Electronic Engineering, Yonsei University, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

School of Chemistry and Biochemistry and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funding

Air Force Office of Scientific Research · Division of Electrical, Communications and Cyber Systems · Division of Materials Research

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