journal article·2024-12-24

In-Sensor Noise Reduction and Reservoir Computing System Using ZnO Optoelectronic Memristors for Artificial Vision Applications

Liang Wang, Le Zhang, Shuaibin Hua, Anran Chen, Qiuyun Fu, Xin Guo

ACS Applied Electronic Materials· Volume 6· Issue 12
Publisher page

Abstract

Rapid advancements in artificial intelligence (AI) and the Internet of Things (IoT) demand more efficient data processing than conventional von Neumann architectures offer. In-sensor reservoir computing (RC) addresses this by enabling data processing directly within sensors. Optoelectronic memristors, capable of responding to both electrical and optical inputs, have emerged as a promising solution. We present electronic neurons and opto-synapses made of Pt/Ag/ZnO/Pt/Ti memristors, demonstrating stable threshold switching (with cumulative probability variations of 5.06% for V th ) and neuron functions (such as spike encoding and LIF behavior) under electrical stimuli, as well as light-tunable synaptic behaviors (including PPF and STM). This enables the device to perform image sensing and noise reduction. Moreover, we propose an in-sensor noise reduction and RC system that emulates the human vision system, achieving high-precision classification (99.33%) of noisy images. This system offers cost-effective training and efficient processing of optical stimuli, opening innovative avenues for edge computing and machine vision applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Neural dynamics and brain function

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China

Engineering Research Center for Functional Ceramics of Ministry of Education, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, P. R. China

Funding

Natural Science Foundation of Hubei Province · National Natural Science Foundation of China

References (56)

Show source-provided references
1. 10.1038/s41467-024-49149-510.1038/s41467-024-49149-5 ↗
2. 10.1002/adfm.20231301010.1002/adfm.202313010 ↗
3. 10.1002/adma.20230032910.1002/adma.202300329 ↗
4. 10.1016/j.mejo.2022.10563410.1016/j.mejo.2022.105634 ↗
5. 10.1038/s41467-024-48908-810.1038/s41467-024-48908-8 ↗
6. 10.1038/s41563-019-0291-x10.1038/s41563-019-0291-x ↗
7. 10.1002/adma.20237032110.1002/adma.202370321 ↗
8. 10.1126/science.abj997910.1126/science.abj9979 ↗
9. 10.1002/adfm.20211097610.1002/adfm.202110976 ↗
10. 10.1002/adma.20230739310.1002/adma.202307393 ↗
11. 10.1002/adfm.20230397010.1002/adfm.202303970 ↗
12. 10.1021/acsmaterialslett.2c0091110.1021/acsmaterialslett.2c00911 ↗
13. 10.1002/adfm.20221389410.1002/adfm.202213894 ↗
14. 10.1038/s41467-023-36205-910.1038/s41467-023-36205-9 ↗
15. 10.1002/aisy.20230002610.1002/aisy.202300026 ↗
16. 10.1016/j.nanoen.2021.10629110.1016/j.nanoen.2021.106291 ↗
17. 10.1038/s41928-020-00501-910.1038/s41928-020-00501-9 ↗
18. 10.1021/acsnano.1c0675810.1021/acsnano.1c06758 ↗
19. 10.1002/advs.20210463210.1002/advs.202104632 ↗
20. 10.1021/acs.nanolett.3c0435810.1021/acs.nanolett.3c04358 ↗
21. 10.1007/s40820-024-01338-z10.1007/s40820-024-01338-z ↗
22. 10.1016/j.nanoen.2023.10910210.1016/j.nanoen.2023.109102 ↗
23. 10.1016/j.nanoen.2024.10926710.1016/j.nanoen.2024.109267 ↗
24. 10.1002/inf2.1247310.1002/inf2.12473 ↗
25. 10.1038/s41467-021-22047-w10.1038/s41467-021-22047-w ↗
26. 10.1126/sciadv.aba617310.1126/sciadv.aba6173 ↗
27. 10.1002/adma.20230909910.1002/adma.202309099 ↗
28. 10.1038/s41563-022-01398-910.1038/s41563-022-01398-9 ↗
29. 10.1038/s41467-024-46867-810.1038/s41467-024-46867-8 ↗
30. 10.1038/s41467-017-02337-y10.1038/s41467-017-02337-y ↗
31. 10.1038/s41467-022-34230-810.1038/s41467-022-34230-8 ↗
32. 10.1038/s41928-024-01169-110.1038/s41928-024-01169-1 ↗
33. 10.1038/s41565-019-0501-310.1038/s41565-019-0501-3 ↗
34. 10.1002/adfm.20231350710.1002/adfm.202313507 ↗
35. 10.1002/adfm.20170486210.1002/adfm.201704862 ↗
36. 10.1002/adma.20230884310.1002/adma.202308843 ↗
37. 10.1126/sciadv.adk947410.1126/sciadv.adk9474 ↗
38. 10.1002/adma.20200432810.1002/adma.202004328 ↗
39. 10.1109/LED.2022.317777410.1109/LED.2022.3177774 ↗
40. 10.1021/acsnano.1c0467610.1021/acsnano.1c04676 ↗
41. 10.1002/aisy.20227003910.1002/aisy.202270039 ↗
42. 10.1038/nature2330710.1038/nature23307 ↗
43. 10.1109/TED.2023.323690610.1109/TED.2023.3236906 ↗
44. 10.1038/s41928-018-0023-210.1038/s41928-018-0023-2 ↗
45. 10.1021/acsami.1c0768710.1021/acsami.1c07687 ↗
46. 10.1002/adfm.20231321910.1002/adfm.202313219 ↗
47. 10.1016/j.matt.2022.12.00110.1016/j.matt.2022.12.001 ↗
48. 10.1002/adma.20220484410.1002/adma.202204844 ↗
49. 10.1002/adma.20221159810.1002/adma.202211598 ↗
50. 10.1002/aisy.20220019610.1002/aisy.202200196 ↗
51. 10.1002/aelm.20230086310.1002/aelm.202300863 ↗
52. 10.1002/adfm.20230694510.1002/adfm.202306945 ↗
53. 10.1002/adma.20190243410.1002/adma.201902434 ↗
54. 10.1002/smll.20220111110.1002/smll.202201111 ↗
55. 10.1038/s41928-024-01133-z10.1038/s41928-024-01133-z ↗
56. 10.1038/s41467-023-41419-y10.1038/s41467-023-41419-y ↗