journal article·2024-06-25

Emulation of Optoelectronic Synaptic Behavior in a MoS2/WSe2-Based p–n van der Waals Heterostructure Memtransistor

Xiaodong Wang, Fengxiang Chen, Xiaoli Li, Tao Xiang, Lisheng Wang

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Abstract

Memtransistors, which combine the advantages of memristors and transistors, are expected to be candidates for next-generation nonvolatile memories and synaptic devices due to their nanoscale size, nonlinearity, synaptic-like characteristics, and availability for logic operations. Here, an optoelectronic memtransistor based on two-dimensional (2D) van der Waals MoS 2 /WSe 2 p–n heterostructures is proposed to mimic neural synaptic functions. In 30 cycles, the device demonstrates reversible bipolar resistance switching phenomena, alternating between a low resistance state and a high resistance state with a switching ratio of 10 3 . Moreover, neuromimetic learning functions, such as excitatory postsynaptic current/inhibitory postsynaptic currents (EPSC/IPSC), short-term plasticity(STP) and long-term plasticity(LTP), paired-pulse facilitation (PPF), and spike rate-dependent plasticity (SRDP), are performed by controlling the electrical and optical inputs. In addition, simulation of the light-adaptive behavior of the biological visual system is realized successfully. This work provides a strategy for the application of p–n heterojunction memtransistors in the field of optoelectronic synapses.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Photoreceptor and optogenetics research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China

Funding

National Natural Science Foundation of China

References (32)

Show source-provided references
1. 10.1016/j.mtnano.2019.10005910.1016/j.mtnano.2019.100059 ↗
2. 10.1145/216585.21658810.1145/216585.216588 ↗
3. 10.1002/adfm.20230582210.1002/adfm.202305822 ↗
4. 10.1039/D2NR06580K10.1039/D2NR06580K ↗
5. 10.1038/nature0301010.1038/nature03010 ↗
6. 10.1126/science.125464210.1126/science.1254642 ↗
7. 10.1039/D0NR08725D10.1039/D0NR08725D ↗
8. 10.1002/adma.20180622710.1002/adma.201806227 ↗
9. 10.1021/acsami.1c0766510.1021/acsami.1c07665 ↗
10. 10.1038/nature2574710.1038/nature25747 ↗
11. 10.1002/smll.20210317510.1002/smll.202103175 ↗
12. 10.1002/aelm.20190046710.1002/aelm.201900467 ↗
13. 10.1002/advs.20230281310.1002/advs.202302813 ↗
14. 10.1002/adfm.20190110610.1002/adfm.201901106 ↗
15. 10.1021/acsnano.7b0381910.1021/acsnano.7b03819 ↗
16. 10.1021/nn504775f10.1021/nn504775f ↗
17. 10.1063/1.482118510.1063/1.4821185 ↗
18. 10.1103/PhysRev.103.164810.1103/PhysRev.103.1648 ↗
19. 10.1021/acs.jpcc.8b0808210.1021/acs.jpcc.8b08082 ↗
20. 10.1021/acsami.1c1832910.1021/acsami.1c18329 ↗
21. 10.1146/annurev.physiol.64.092501.11454710.1146/annurev.physiol.64.092501.114547 ↗
22. 10.1038/s41586-020-2285-x10.1038/s41586-020-2285-x ↗
23. 10.1007/s12274-023-6004-410.1007/s12274-023-6004-4 ↗
24. 10.1021/acsami.9b1425910.1021/acsami.9b14259 ↗
25. 10.1038/s41928-022-00713-110.1038/s41928-022-00713-1 ↗
26. 10.1002/adfm.20201065510.1002/adfm.202010655 ↗
27. 10.1002/adma.20221211810.1002/adma.202212118 ↗
28. 10.1021/acs.nanolett.1c0324010.1021/acs.nanolett.1c03240 ↗
29. 10.1002/aelm.20220042110.1002/aelm.202200421 ↗
30. 10.1523/JNEUROSCI.02-01-00032.198210.1523/JNEUROSCI.02-01-00032.1982 ↗
31. 10.1002/adfm.20150142710.1002/adfm.201501427 ↗
32. 10.1038/381526a010.1038/381526a0 ↗