Self-Powered Ultraviolet–Visible Transparent Photodetector Based on Mo-Doped BiVO₄ Thin Films

Till now, BiVO 4 has been extensively investigated for photoelectrochemical cell applications; however, the efficacy of BiVO 4 in the photodetector (PD) and photovoltaic field is still challenging due to its poor absorption ability, conductivity, and high recombination rate. Keeping these issues in mind, herein, we report a co-sputtered Mo-doped (Mo:BiVO 4 ) thin films-based self-powered ultraviolet (UV)–visible transparent PD (TPD) with a high photo-to-dark current ratio value of 1.2 × 10 3 and a detectivity value of 4.1 × 10 10 Jones. Mo:BiVO 4 -based self-powered TPD devices show a fast response speed with a value of 3.5 ms. Moreover, the fabricated TPD devices show a clear photovoltaic photoresponse with an average visible transparency value of 65%. The highest obtained open-circuit voltage value is about 300 mV with a short-circuit current density value of 2.53 mA/cm 2 under visible illumination along with an onsite power production value of 44 μW. Developed Mo:BiVO 4 -based TPD devices explore the suitability of BiVO 4 in the transparent optoelectronics and onsite power generation field for the future.