DataVXACS Applied Electronic MaterialsPaper
journal article·2024-03-26

Thermal Transport Properties of β-Ga2O3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting Process

Wenhui Xu, Tiancheng Zhao, Lianghui Zhang, Kang Liu, Huarui Sun, Zhenyu Qu, Tiangui You, Ailun Yi, Kai Huang, Genquan Han, Fengwen Mu, Tadatomo Suga, Xin Ou, Yue Hao

ACS Applied Electronic Materials· Volume 6· Issue 3
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Abstract

Integrating β-Ga 2 O 3 films onto a highly thermally conductive substrate is regarded as a promising method to remove the heat from β-Ga 2 O 3 high-power devices, ultimately increasing their reliability and performance. In this work, we fabricated three wafer-scale heterogeneous integration materials (HIMs), i.e., β-Ga 2 O 3 –SiC (GaOSiC), β-Ga 2 O 3 –Al 2 O 3 –SiC (GaOISiC), and β-Ga 2 O 3 –Al 2 O 3 –Si (GaOISi), by using ion-cutting and surface-activated bonding techniques. The heat block effect of the intermediate amorphous Al 2 O 3 layer from β-Ga 2 O 3 to SiC is significantly relieved by employing a post-annealing process. Furthermore, the Al 2 O 3 layer blocks the interfusion of elements between β-Ga 2 O 3 and the host substrate, avoiding the degradation of thermal conductivity of β-Ga 2 O 3 films after post-annealing. Benefited from this, a relatively high thermal conductivity (9.3 W/m·K) is achieved among β-Ga 2 O 3 thin films with the same thickness and the effective thermal boundary conductance was improved in all β-Ga 2 O 3 HIMs. One to two orders of magnitude reduction in the junction-to-package device thermal resistance is revealed by the thermal modeling of β-Ga 2 O 3 HIM metal-oxide-semiconductor field-effect transistors, which demonstrates that extremely high heat dissipation can be realized by optimizing the TBR eff value and integrating with thermally conductive substrates (SiC and diamond). These results give key guidelines to engineer the thermal transport properties of β-Ga 2 O 3 HIMs for device thermal management.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen 518055, China

The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Collaborative Research Center, Meisei University, Hino 191-8506, Japan

Funding

Postdoctoral Research Foundation of China · Tip-top Scientific and Technical Innovative Youth Talents of Guangdong Special Support Program · Special Project for Research and Development in Key areas of Guangdong Province · Science and Technology Foundation of Shenzhen City · National Postdoctoral Program for Innovative Talents · K. C. Wong Education Foundation · National Natural Science Foundation of China · Shanghai Rising-Star Program · Key Research Project of Zhejiang Laboratory

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