DataVXACS Applied Electronic MaterialsPaper
journal article·2022-11-22

Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy

Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

ACS Applied Electronic Materials· Volume 4· Issue 11
Publisher page
Source abstract

Abstract

The effect of pure mechanical strain on ferroelectricity was investigated for (001)-one-axis-oriented (Al0.8Sc0.2)N films deposited on (111)Pt-coated substrates with different thermal expansion coefficients. The mechanical lattice strains were successfully controlled by using substrates with different thermal expansion coefficients, though the composition of the films is the same. The changes in the remanent polarization (Pr) and coercive field (Ec) values of these films can be understood by the internal parameter u representing crystal anisotropy of a wurtzite structure. These results suggest that the ferroelectric properties of (Al1–xScx)N films can be tuned via crystal anisotropy.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Acoustic Wave Resonator Technologies · Ferroelectric and Piezoelectric Materials · Metal and Thin Film Mechanics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama226-8502, Japan

Research Center for Functional Materials, National Institute for Materials Science, Tsukuba305-0044, Japan

PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama332-0012, Japan

Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tosu841-0052, Japan

Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama226-8502, Japan

Funding

Ministry of Education, Culture, Sports, Science and Technology

References (30)

Show source-provided references
1. 10.1063/1.482417910.1063/1.4824179 ↗
2. 10.1063/1.508494510.1063/1.5084945 ↗
3. 10.1103/PhysRevMaterials.5.04441210.1103/PhysRevMaterials.5.044412 ↗
4. 10.1063/5.006805910.1063/5.0068059 ↗
5. 10.1063/5.005375510.1063/5.0053755 ↗
6. 10.1063/5.009991310.1063/5.0099913 ↗
7. 10.1063/5.006002110.1063/5.0060021 ↗
8. 10.2109/jcersj2.2118410.2109/jcersj2.21184 ↗
9. 10.1038/npjcompumats.2016.910.1038/npjcompumats.2016.9 ↗
10. 10.1016/j.sna.2013.05.00410.1016/j.sna.2013.05.004 ↗
11. 10.1063/1.495494210.1063/1.4954942 ↗
12. 10.1063/5.001528110.1063/5.0015281 ↗
13. 10.1063/1.174309110.1063/1.1743091 ↗
14. 10.1103/PhysRevX.6.02103810.1103/PhysRevX.6.021038 ↗
15. 10.1021/acsami.0c1591210.1021/acsami.0c15912 ↗
16. Hahn T. A. · AIP Conf. Proc. · 1972 · 3 · 1310.1063/1.2948551 ↗
17. 10.1063/1.33396510.1063/1.333965 ↗
18. 10.1063/1.166343210.1063/1.1663432 ↗
19. 10.1111/j.1151-2916.1926.tb17176.x10.1111/j.1151-2916.1926.tb17176.x ↗
20. 10.1063/1.504019010.1063/1.5040190 ↗
21. 10.1063/5.005155710.1063/5.0051557 ↗
22. 10.1017/S088571561400054210.1017/S0885715614000542 ↗
23. 10.1080/1478644330946219910.1080/14786443309462199 ↗
24. Wang L. M. · IEEE 25th Int. Conf. Microelectron. · 2006 · 576
25. 10.1016/j.ssc.2018.07.01010.1016/j.ssc.2018.07.010 ↗
26. 10.1016/j.tsf.2019.02.02310.1016/j.tsf.2019.02.023 ↗
27. 10.1002/pssr.20210008710.1002/pssr.202100087 ↗
28. 10.1063/5.002362610.1063/5.0023626 ↗
29. 10.1007/978-3-540-34591-6_210.1007/978-3-540-34591-6_2 ↗
30. 10.1063/5.004361310.1063/5.0043613 ↗