Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications
Source abstract
Abstract
Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to its unique properties. The wurtzite-structure AlScN is compatible with the complementary metal oxide semiconductor (CMOS) process and has improved piezoelectricity compared with undoped aluminum nitride (AlN), making it a promising candidate to be used for next-generation radio frequency (RF) microelectromechanical system (MEMS) building blocks. Additionally, the ferroelectricity observed in AlScN can be potentially applied to ferroelectric memory devices. In this spotlight article, we provide a brief introduction of AlScN and summarize the recent progress of AlScN-based applications, including RF acoustic wave resonators, filters, and ferroelectric memory devices. Finally, the current challenges as well as the future opportunities of AlScN materials and related applications are discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · Ferroelectric and Piezoelectric Materials · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-02, Innovis Tower, 138634, Singapore
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
Funding
Science and Engineering Research Council
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