Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide
Source abstract
Abstract
The ferroelectric properties of hafnium oxide films are strongly influenced by the crystallization process due to the interaction of thermodynamics, kinetics, and mechanical stress. In this work, the influence of annealing temperature on the crystallographic properties and microstructure of Si-doped hafnium oxide thin films as well as their ferroelectric properties are investigated by X-ray diffraction, transmission Kikuchi diffraction, and electrical characterization. The findings reveal the emergence of a [100] and [110] out-of-plane texture for metal–ferroelectric–metal (MFM) and metal–ferroelectric–insulator–semiconductor (MFIS) capacitor structures with increasing annealing temperature, respectively. In combination with observed stress relaxation at higher temperatures and the evolution of the wake-up behavior, insights into the crystallization process and the influence of the interplay of microstructure and stress on the ferroelectric properties of hafnium oxide thin films are given.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Cardiac Structural Anomalies and Repair
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fraunhofer IPMS, Center Nanoelectronic Technologies, An der Bartlake 5, 01109 Dresden, Germany
TU Dresden, Institute for Applied Physics, 01062 Dresden, Germany, and Center of Excellence - Complexity and Topology in Quantum Matter (ct.qmat), Technische Universität Dresden, 01062 Dresden, Germany
Funding
Bundesministerium f??r Wirtschaft und Energie · Freistaat Sachsen
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