DataVXACS Applied Electronic MaterialsPaper
journal article·2021-02-23Open access

Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips

Nursidik Yulianto, Grandprix T. M. Kadja, Steffen Bornemann, Soniya Gahlawat, Nurhalis Majid, Kuwat Triyana, Fatwa F. Abdi, Hutomo Suryo Wasisto, Andreas Waag

ACS Applied Electronic Materials· Volume 3· Issue 2
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Source abstract

Abstract

Gallium nitride (GaN) film delamination is an important process during the fabrication of GaN light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser pulses, exploiting nonlinear absorption rather than single-photon absorption such as in conventional laser lift-off (LLO) employing excimer or Q-switched laser sources. The focus of this study is to investigate the influence of laser scanning speed and integrated fluence corresponding to laser energy per area during the LLO processing of GaN LED chips and their resulting structural properties. Because both the sapphire substrate and InGaN/GaN heterostructures are fully transparent to the emission of the laser system, a key question is related to the impact of laser pulses on the quality of a thin film structure. Therefore, several characterization methods (i.e., scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electroluminescence spectroscopy) were employed to understand the material modifications made by femtosecond LLO (fs-LLO). We demonstrated that by adjusting the laser scanning speed, smooth GaN surfaces and good crystal quality could be obtained regardless of the existing delamination of metal contact, which then slightly downgraded the LED performance. Here, the integrated fluence level was set in the range of 2.6–4.4 J/cm2 to enable the fs-LLO process. Moreover, two mitigation strategies were developed and proven to improve the optoelectrical characteristics of the lifted-off LEDs (i.e., modification of the processing step related to the metal creation and reduction of laser energy).
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · Laser Material Processing Techniques · Ocular and Laser Science Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig 38106, Germany

Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig 38106, Germany

Research Center for Physics, Indonesian Institute of Sciences (LIPI), Jl. Kawasan Puspiptek no. 441-442, Tangerang Selatan 15314, Indonesia

Division of Inorganic and Physical Chemistry, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl Ganesha 10, Bandung 40132, Indonesia

Research Center for Nanosciences and Nanotechnology, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132, Indonesia

Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, Berlin 14109, Germany

Department of Chemistry, Indian Institute of Technology Delhi, New Delhi 110016, India

Institute of Energy Research and Physical Technologies, Technische Universität Clausthal, Leibnizstraße 4, Clausthal-Zellerfeld 38678, Germany

Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara P. O. Box BLS 21, Yogyakarta 55281, Indonesia

Funding

Nieders?chsisches Ministerium f?r Wissenschaft und Kultur · Deutsche Forschungsgemeinschaft · H2020 Future and Emerging Technologies · Kementerian Riset, Teknologi dan Pendidikan Tinggi · Indonesian - German Center for Nano- and Quantum Technologies

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